| Глава от книга |
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1
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E. Valcheva, K.Germanova, S. Georgiev, A study of the chemical structure and electrical properties of PECVD SiO2 -InSb MIS structures, ", Advances in Low-temperature Plasma Chemistry, Technology, Applications, V.4, ed. H.V.Boenig, (Technomic Publ. Co.), Ref
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1992
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2
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E. Valcheva, Investigation on the Physical Properties of the Interface of PECVD SiO2 -InSb, ", Advances in Low-temperature Plasma Chemistry, Technology, Applications, V.4, ed. H.V.Boenig, (Technomic Publ. Co.) , Ref
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1992
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| Дисертация доктор на науките |
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Евгения Петрова Вълчева, Хетероинтерфейси в III – нитридни структури с голямо решетъчно несъответствие , СУ "Св. Климент Охридски"
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2014
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| Дисертация д-р |
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Евгения Петрова Вълчева, Изследване на електро-физичните свойства на интерфейса plasma-enhanced CVD SiO2 -InSb, СУ "Св. Климент Охридски"
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1989
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| Друго (научно-популярни и др. под.) |
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1
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Евгения Петрова Вълчева, Сините светодиоди – революция в осветителните технологии, сп. Природа, т. 1, стр. 8-13.,
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2015
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2
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Евгения Петрова Вълчева, Сините светодиоди: революция в осветителните технологии, Сп. Енергетика, т. 3 , стр.41-46 ,
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2015
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3
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Евгения Петрова Вълчева, Сините светодиоди- в края на полупроводниковата революция, Светът на физиката, т. 4, стр. 373-380.,
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2014
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4
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Евгения Петрова Вълчева, Сините светодиоди и и разработване на бели светлинни източници по фундаментално нов начин,
сп. Наука, т.6, стр. 6-9,
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2014
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5
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E. P. Valcheva, Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells (vol 244, pg 1727, 2007),
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2007
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6
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E. P. Valcheva, Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates (vol 90, pg 6011, 2001),
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2002
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7
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E. P. Valcheva, CHARACTERIZATION OF MOVPE-GROWN GAAS-LAYERS BY C-V-ANALYSIS (VOL A56, PG 69, 1993),
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1993
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| Научен проект |
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1
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Евгения Вълчева, Plasma Enabled and Graphene Allowed Synthesis of Unique nano Structures, PEGASUS, Член, HORIZON 2010
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2018
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2
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Евгения Вълчева, Нови методи за получаване на графен и графенов оксид чрез модификация на аморфни и нано-дисперсни въглеродни фази, Член, МОН-ФНИ
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2018
|
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3
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Евгения Вълчева, Изследване на InGaN / GaN наноструктури за оптоелектрониката , Член, ФНИ на СУ
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2017
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4
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Евгения Вълчева, Изследване на разредени нитриди на А3В5 съединения за следваща генерация слънчеви елементи , Член, ФНИ на СУ
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2016
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5
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Евгения Вълчева, Нитридни свръхрешетки с къс период като излъчватели в THz област, Ръководител, СУ "Св. Климент Охридски", Номер на договора:156/2015 г.
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2015
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|
6
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Евгения Вълчева, Перспективни материали на основата на разредени нитриди на А3В5 съединения за следваща генерация слънчеви елементи , Член, ФНИ на СУ, Номер на договора:
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2015
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7
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Евгения Вълчева, MultiscaleSolar (MULTISCALE IN MODELLING AND VALIDATION FOR SOLAR PHOTOVOLTAICS), Член, COST, Номер на договора:COST action MP1406
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2014
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8
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Евгения Вълчева, Електронна структура и тунелен транспорт в свръхрешетки с къс период – влияние на параметрите на материалите и флуктуациите на интерфейсите, Ръководител, СУ "Св. Климент Охридски", Номер на договора:76/2013
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2013
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9
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Евгения Вълчева, ПОВЪРХНИННИ СЛОЕВЕ С АНТИМИКРОБНИ И ФОТОКАТАЛИТИЧНИ СВОЙСТВА ЗА СЪВРЕМЕННАТА МЕДИЦИНА И ПОДОБРЯВАНЕ КАЧЕСТВОТО НА ЖИВОТА, Ръководител, СУ
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2012
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10
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Евгения Вълчева, InN и In –обогатени нитриднисъединения (InGaN, InAlN) и хетероструктури за оптоелектронни приложения , Ръководител, Програма РИЛА за двустранно сътрудничество с Франция, Номер на договора:РИЛА 5-15
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2011
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11
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Евгения Вълчева, in vitro-моделиране на зараждането на инсулинови кристали в поток и разтварянето им в кръвния ток; възстановяване на инсулин от използвани инсулинови писалки , Член, МОН-ФНИ, Номер на договора:ID01/110/2010
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2010
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12
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Евгения Вълчева, Формиране на фотокаталитично-активни тънки слоеве при стайна температура, Ръководител, DAAD, Номер на договора:DAAD- ДНТС 02/3/2010
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2010
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13
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Евгения Вълчева, Оптични преходи в нитридни свръхрешетки с къс период – влияние на структурата на интерфейсите , Ръководител, СУ "Св. Климент Охридски", Номер на договора:39/2008
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2008
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14
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Евгения Вълчева, Структура и свойства на InN, нитридни съединения (InGaN, InAlN) и хетероструктури , Ръководител, Програма РИЛА за двустранно сътрудничество с Франция, Номер на договора:RILA 2-204/2008
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2008
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15
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Евгения Вълчева, Оптични свойства на нанокомпозити на базата на квантови точки в зол-гелни матрици за приложение в оптоелектрониката , Ръководител, СУ "Св. Климент Охридски", Номер на договора:19/2007
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2007
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16
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Евгения Вълчева, Център за Раманова спектроскопия и фотолуминисценция , Член, ФНИ, Номер на договора:ДФ1-835/2007
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2007
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17
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Евгения Вълчева, Многослойни структури и нанокомпозитни материали за приложения в електрониката , Член, ФНИ, Номер на договора:Д01-436 / 2006
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2006
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18
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Евгения Вълчева, Синтез и изследване на III-нитридни нанокристални материали получени с йонно-имерсионна имплантация за оптоелектронни приложения, Ръководител, DAAD, Номер на договора:DAAD-Д01-79/2006
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2006
|
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19
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Евгения Вълчева, Формиране и изследване на твърдотелни и органични тънки слоеве за сензорни функции, Член, ФНИ, Номер на договора:ВУФ-203/ 2006
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2006
|
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20
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Евгения Вълчева, Semiconductor Materials for Information Technology, Член, FP7 Marie Curie Host Fellowships for ToK, Номер на договора:FP7 Marie Curie Host Fellowships for ToK (MTKD-CT-2005-029671)
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2005
|
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21
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Евгения Вълчева, Електронни и оптични свойства на хетероепитаксиални слоеве InN , Ръководител, ФНИ, Номер на договора:Ф 1513/2005
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2005
|
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22
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Евгения Вълчева, Изследване на структурата и вибрационните свойства на хетероепитаксиални АlN структури, Ръководител, СУ "Св. Климент Охридски", Номер на договора:52/2005
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2005
|
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23
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Евгения Вълчева, Development of Low Density
Gallium Nitride Substrates , Член, FP5, Номер на договора:DENIS G5RD-CT-2001-00566
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2001
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| Научно ръководство |
|
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Евгения Вълчева, Наноструктурните материали - материали за приложение в слънчеви елементи, Физически факултет дипломна работа:Кристина Борисова Костадинова
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2012
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| Статия в научно списание |
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1
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E. Valcheva, K. Kirilov, N. Bundaleska, A. Dias, E. Felizardo, M. Abrashev, N. Bundaleski, O.M.N.D. Teodoro, Th. Strunskus, Zh. Kiss’ovski, Low temperature electrical transport in microwave plasma fabricated free-standing graphene and N-graphene sheets, Materials Research Express, vol:10, issue:2, 2023, pages:25602-25612, ISSN (online):2053-1591 , doi:10.1088/2053-1591/acb7ca, Ref, Web of Science, IF (2.3 - 2022), Web of Science Quartile: Q3 (2023), SCOPUS, SJR (0.402 - 2022), SCOPUS Quartile: Q2 (2023), International
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2023
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2
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T. Milenov, D. Dimov, I. Kostadinov, G. Avdeev, ..., E. Valcheva, Modification of Carbon Black by Laser Irradiation, Journal of Physics: Conference Series, vol:2487 , issue:1, 2023, pages:12006-0, doi:10.1088/1742-6596/2487/1/012006, Ref, IR , SCOPUS, SJR (18 - 2021), SCOPUS Quartile: Q4 (2023), PhD
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2023
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3
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D.A. Dimov, N. Stankova, D. Karaivanova, ..., E. Valcheva, ..., Modification of microcrystaline graphites by pulsed laser ablation in a flow mode suspension, Journal of Physics: Conference Series, vol:2487 , issue:1, 2023, pages:12010-0, doi:10.1088/1742-6596/2487/1/012010, Ref, IR , SCOPUS, SJR (18 - 2021), SCOPUS Quartile: Q4 (2023), PhD
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2023
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4
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Milenov, Teodor I., Dimov, Dimitar A., Avramova, Ivalina A., Kolev, Stefan K., Trifonov, Dimitar V., Avdeev, Georgi V., Karashanova, Daniela B., Georgieva, Biliana C., Ivanov, Kamen V., Valcheva, Evgenia P., Modification of micro-crystalline graphite and carbon black by acetone, toluene, and phenol, JOURNAL OF CHEMICAL PHYSICS, vol:158, issue:6, 2023, ISSN (print):0021-9606, ISSN (online):1089-7690, doi:10.1063/5.0133736
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2023
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5
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T. Milenov,, D. Trifonov,, ..., E. Valcheva, Study of the Chemical Vapor Deposition of Nano-Sized Carbon Phases on {001} Silicon, Materials, vol:16, issue:22, 2023, pages:7190-18, ISSN (online):19961944, doi:https://doi.org/10.3390/ma16227190, Ref, Web of Science, IF (3.4 - 2023), Web of Science Quartile: Q1 (2023), SCOPUS, SJR (0.56 - 2022), SCOPUS Quartile: Q2 (2023)
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2023
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6
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M. Tsvetkov, M. Nedyalkov, E. Valcheva, M. Milanova, Characterization of Tungstates of the Type Hf(1-x)Ln(x)W(2)O(8-x/2) (Ln = Eu, Tm, Lu) Synthesized Using the Hydrothermal Method, Crystals, 2022, doi:https://doi.org/10.3390/cryst12030327, Ref, IF, IF (2.67 - 2021), Web of Science Quartile: Q2 (2022), SCOPUS Quartile: Q2 (2022), PhD
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2022
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7
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I. Avramova, D. Dimov, N. Stankova, M. Petrov, D. Karaivanova, G. Avdeev, S. Russev, D. Karashanova, B. Georgieva, E. Valcheva, Novel Approach for Synthesis of Graphene-like Phases by Pulsed Laser Ablation in a Flow-Mode Suspension, Materials , vol:15, issue:22, 2022, pages:7870-7884, doi:10.3390/ma15227870, Ref, Web of Science, IF (3.748 - 2021), Web of Science Quartile: Q2 (2021), SCOPUS, SJR (0.604 - 2021), SCOPUS Quartile: Q2 (2022), International
|
2022
|
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8
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Milenov, T., Terziyska, P., Avdeev, G., Karashanova, D., Georgieva, B., Avramova, I., Genkov, K., Valcheva, E., Structure and Phase Composition Study of Heavy Doped with Carbon Thin Films of TiO2 : C Deposited by RF Magnetron Sputtering, RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, vol:67, issue:10, 2022, pages:1509-1520, ISSN (print):0036-0236, ISSN (online):1531-8613, doi:10.1134/S0036023622100333
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2022
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9
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T. Milenov, D. Karaivanova, O. Angelov, ..., E. Valcheva, Structure and phase composition study of thin TiO2:C films deposited by r.f. magnetron sputtering, Journal of Physics: Conference Series, vol:2240, issue:1, 2022, pages:12009-0, ISSN (print):1742-6588, ISSN (online):1742-6596, doi:10.1088/1742-6596/2240/1/012009, Ref, SCOPUS, SJR (0.21 - 2021), SCOPUS Quartile: Q4 (2020)
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2022
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|
10
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Hristova-Avakumova, N.G., E. Valcheva, ..., Yancheva, D.Y., In vitro and in silico studies of radical scavenging activity of salicylaldehyde benzoylhydrazones, Journal of Molecular Structure, vol:1245, 2021, pages:131021-131029, ISSN (print):00222860, Ref, Web of Science, IF (3196 - 2020), Web of Science Quartile: Q2 (2021), SCOPUS, SJR (471 - 2020)
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2021
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11
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D. Nesheva, Z. Fogarassy, M. Fabian, T. Hristova-Vasileva, A. Sulyok, I. Bineva, E. Valcheva, K. Antonova, P. Petrik, Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films, Journal of Matererial Science , vol:56, 2021, pages:3197-3209, ISSN (print):15734803, 00222461, Ref, IF (3.553 - 2019), Web of Science Quartile: Q1 (2019), SCOPUS, SJR (0.8 - 2019), SCOPUS Quartile: Q1 (2019), International
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2021
|
|
12
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T. Milenov, I. Avramova, A. Dikovska, D. Karaivanova, P. Terziyska, S. Kolev, ..., V. Atanasov, E. Valcheva, Modification of graphene-like, hydrogenated amorphous, hydrogenated tetrahedral amorphous carbon and amorphous carbon thin films by UV-C light, Surfaces and Interfaces , vol:24, 2021, pages:101073-8, ISSN (print):2468-0230, doi:10.1016/j.surfin.2021.101073, Ref, IF (3.724 - 2019), Web of Science Quartile: Q1 (2019), SCOPUS, SJR (0.66 - 2019), SCOPUS Quartile: Q1 (2019)
|
2021
|
|
13
|
T. Milenov,, A. Dikovska,, I. Avramova, ...., E. Valcheva, Modification of thin carbon films by UVc light, Journal of Physics Conference Series , vol:1859, issue:1, 2021, pages:12008-6, ISSN (print):17426588, 17426596, Ref, Web of Science, IF (0.54 - 2019), Web of Science Quartile: Q3 (2021), SCOPUS, SJR (0.23 - 2019), SCOPUS Quartile: Q3 (2021)
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2021
|
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14
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T. Milenov,, D. Dimov,, A. Nikolov,, ...., E. Valcheva, Nd:YAG laser ablation of micro-crystalline graphite in a water suspension, Journal of Physics Conference Series, vol:1859, issue:1, 2021, pages:12006-6, ISSN (print):17426588, 17426596, Ref, Web of Science, IF (0.54 - 2019), Web of Science Quartile: Q3 (2021), SCOPUS, SJR (0.23 - 2019), SCOPUS Quartile: Q3 (2021), PhD
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2021
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15
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I. Balchev, T. Nurgaliev, I. Kostadinov, ....., E. Valcheva, ....., RF magnetron sputtering of Bi 12 TiO 20 thin films on various substrates, Journal of Physics Conference Series, vol: 1859, issue:1, 2021, pages:12060-6, ISSN (print):17426588, 17426596, Ref, Web of Science, IF (0.54 - 2019), Web of Science Quartile: Q3 (2019), SCOPUS, SJR (0.23 - 2019), SCOPUS Quartile: Q3 (2019)
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2021
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16
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T. Milenov, D. Dimov, A. Nikolov, ..., E. Valcheva, Synthesis of graphene–like phases by laser ablation of micro-crystalline graphite in water suspension, Surfaces and Interfaces, vol:27, 2021, pages:101491-101499, ISSN (online):24680230, doi:10.1016/j.surfin.2021.101491, Ref, Web of Science, IF (4.8 - 2021), Web of Science Quartile: Q1 (2021), SCOPUS, SJR (0.74 - 2021), SCOPUS Quartile: Q1 (2021), PhD
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2021
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17
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T Milenov, I Avramova, G Avdeev, J Mladenoff, D Pishinkov, K Genkov, A Zyapkov, S Russev, ..., E. Valcheva, Modification of carbon black by thermal treatment in air atmosphere, J. Phys.: Conf. Ser., vol:1492, 2020, pages:12063-12067, Ref, IF (0.54 - 2019), SCOPUS, SJR (0.22 - 2019)
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2020
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18
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T Milenov, I Avramova, A Dikovska, G Avdeev, J Mladenoff, S Kolev, E. Valcheva, Modification of thin carbon films by UVC light, J. Phys.: Conf. Ser., vol:1492, 2020, pages:120301-120305, Ref, Web of Science, IF (0.54 - 2019), SCOPUS, SJR (0.22 - 2019), SCOPUS Quartile: Q3 (2020)
|
2020
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19
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N. Bundaleska, A. Dias, N. Bundaleski, E. Felizardo, J. Henriques, D. Tsyganov, M. Abrashev, E. Valcheva, J. Kissovski, E. Tatarova, Prospects for microwave plasma synthesized N‑graphene in secondary electron emission mitigation applications, Scientific Reports, vol:10, 2020, pages:13013-0, ISSN (online):2045-2322, doi:https://doi.org/10.1038/s41598-020-69844-9, Ref, Web of Science, IF (3.998 - 2019), Web of Science Quartile: Q1 (2020), SCOPUS, SJR (1.341 - 2019), International, PhD
|
2020
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20
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M. P. Tsvetkov, I. R. Ivanova, E. P. Valcheva, J. Ts. Zaharieva, M. M. Milanova, Photocatalytic activity of NiFe2O4 and Zn0.5Ni0.5Fe2O4 modified by Eu(III) and Tb(III) for decomposition of Malachite Green, Open Chemistry, 2019, doi:https://doi.org/10.1515/chem-2019-0116, Ref, Web of Science
|
2019
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21
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T. Milenov, A. Dikovska, G. Avdeev, I. Avramova, K. Kirilov, D. Karashanova, P. Terziyska, B. Arnaudov, S. Kolev, E. Valcheva, Pulsed laser deposition of thin carbon films on SiO2/Si substrates, Applied Surface Science , vol:480, 2019, pages:323-329, doi:https://doi.org/10.1016/j.apsusc.2019.02.220, Ref, Web of Science, IF (5 - ), Web of Science Quartile: Q1 (2019), SCOPUS, SJR (5 - ), SCOPUS Quartile: Q1 (2019)
|
2019
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22
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M. Milanova, V. Donchev, K. L. Kostov, D. Alonso-Álvarez, P. Terziyska, G. Avdeev, E. Valcheva, K. Kirilov, S. Georgiev, Study of GaAsSb:N bulk layers grown by liquid phase epitaxy for solar cells applications, Mat. Res.Express , vol:6, issue:7, 2019, ISSN (online):20531591, doi:10.1088/2053-1591/ab179f, Ref, Web of Science, IF (1.929 - 2019), Web of Science Quartile: Q3 (MATERIALS SCIENCE, MULTIDISCIPLINARY), SCOPUS, SJR (0.365 - 2019), SCOPUS Quartile: Q2 (Surfaces, Coatings and Films), International, PhD
|
2019
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23
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Hadjimitova, V.A., Hristova-Avakumova, N.G., Nikolova-Mladenova, B.I., E. Valcheva, Suppressive effect of salicylaldehyde benzoylhydrazone derivatives on ferrous iron-induced oxidative molecular damage – evaluation of the structure-protection activity relationship via Raman spectral analysis, Bulgarian Chemical Communications , vol:51, 2019, pages:97-102, Ref, IR , SCOPUS, SJR (0.14 - 2018), SCOPUS Quartile: Q4 (2019)
|
2019
|
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24
|
T. Milenov, A. Nikolov, G. Avdeev, I. Avramova, S. Russev, D. Karashanova, I. Konstadinov, B. Georgieva, J. Mladenoff, E. Valcheva, Synthesis of graphene-like phases in a water colloid by laser ablation of graphite, Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol:247 , 2019, pages:114379-114385, Ref, IF, IF (35 - 2018), Web of Science Quartile: Q1 (2019)
|
2019
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25
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B. Nedjalkov, E. Valcheva, Distribution of lamb waves in AlScN resonator structures,, Chemistry: Bulgarian Journal of Science Education, vol:27, issue:5, 2018, pages:700-707, ISSN (online):1313-8235, Ref, Web of Science, MSc
|
2018
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26
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N. Bundaleska, J. Henriques, M. Abrashev, A. M. Botelho do Rego, A. M. Ferraria, A. Almeida, F. M. Dias, E. Valcheva, B. Arnaudov, E. Tatarova, Large-scale synthesis of freestanding N-doped graphene using microwave plasma, Scientific Reports, том:8, 2018, стр.:12595-0, doi:10.1038/s41598-018-30870-3, Ref, IF, IF (4.122 - 2017), SCOPUS Quartile: Q1 (2018), в сътрудничество с чуждестранни учени, PhD
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2018
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27
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T. I. Milenov, I. Avramova, E. Valcheva, G. V. Avdeev, S. Rusev, S. Kolev, I. Balchev, I. Petrov, V. N. Popov, Deposition of defected graphene on (001) Si substrates by thermal decomposition of acetone, Superlattices and Microstructures , том:111, 2017, стр.:45-56, doi:10.1016/j.spmi.2017.04.042 , Ref, Web of Science, в сътрудничество с чуждестранни учени
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2017
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28
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M. Fazio,, D. Manova,, D. Hirsch, E. Valcheva, ....., A. Márquez, Depth-resolved study of hydrogen-free amorphous carbon films on stainless steel, Diamond & Related Materials, 74 (2017) 173–181., том:74, 2017, стр.:173-181, Ref, Web of Science, в сътрудничество с чуждестранни учени, PhD
|
2017
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29
|
M. Milanova, V. Donchev, K. L. Kostov, D. Alonso-Álvarez, E. Valcheva, K. Kirilov, I. Asenova, I. G. Ivanov, S. Georgiev, N. Ekins-Daukes, Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys, Semiconductor Science and Technology, том:32, брой:8, 2017, стр.:85005-0, ISSN (print):0268-1242, ISSN (online):1361-6641, doi:https://doi.org/10.1088/1361-6641/aa7404, Ref, Web of Science, SCOPUS Quartile: Q1 (2017), в сътрудничество с чуждестранни учени, MSc
|
2017
|
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30
|
M. Tzvetkov, M. Milanova, Z. Cherkezova-Zheleva, I. Spassova, E. Valcheva, J. Zaharieva, I. Mitov, Mixed Metal Oxides of the Type CoxZn1–xFe2O4 as Photocatalysts for Malachite Green Degradation Under UV Light Irradiation, Acta Chimica Slovenica, том:64, брой:2, 2017, стр.:299-311, doi:10.17344/acsi.2016.3049, Ref, Web of Science
|
2017
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31
|
V. Donchev, I. Asenova, M. Milanova, D. Alonso- Álvarez, K. Kirilov, N. Shtinkov, I. G. Ivanov, S. Georgiev, E. Valcheva, N. Ekins-Daukes, Optical properties of thick GaInAs(Sb)N layers grown by
liquid-phase epitaxy , Journal of Physics: Conf . Series, том:794 , брой:1, 2017, ISSN (online):17426588, doi:10.1088/1742-6596/794/1/012013, Ref, в сътрудничество с чуждестранни учени, MSc
|
2017
|
|
32
|
Milenov, T. I., Valcheva, E., Popov, V. N., Raman Spectroscopic Study of As-Deposited and Exfoliated Defected Graphene Grown on (001) Si Substrates by CVD, JOURNAL OF SPECTROSCOPY, vol:2017, 2017, ISSN (print):2314-4920, ISSN (online):2314-4939, doi:10.1155/2017/3495432
|
2017
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33
|
T. I. Milenov, E. Valcheva, V. N. Popov, Raman Spectroscopic Study of Defected Graphene Deposited on (001) Si Substrates by CVD, J. Spectroscopy , 2017, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2017
|
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34
|
E. Tatarova, A. Dias, J. Henriques, M. Abrashev, N. Bundaleska, E. Kovacevic, N. Bundaleski, U. Cvelbar, E. Valcheva, B. Arnaudov, Towards large-scale in freestanding graphene and N-graphene sheets, Scientific Reports, том:7, 2017, стр.:10175-0, doi:10.1038/s41598-017-10810-3, Ref, IF, IF (4.259 - 2016), SCOPUS Quartile: Q1 (2017), в сътрудничество с чуждестранни учени
|
2017
|
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35
|
T. I. Milenov, I. Avramova, E. Valcheva, S. S. Tinchev, Deposition of graphene/graphene-related phases on different substrates by thermal decomposition of acetone , 48, 2016, стр.:135-0, Ref, Web of Science
|
2016
|
|
36
|
I. Balchev, Kr Tzvetkova, S Kolev, ......, E. Valcheva, ..., Synthesis and characterization of thin amorphous carbon films doped with nitrogen on (001) Si substrates, Journal of Physics Conference Series 764 (1):012013 , том:764, брой:1, 2016, стр.:12013-12017, Ref, Web of Science
|
2016
|
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37
|
Milenov, Teodor, Avramova, Ivalina, Valcheva, Evgenia, E. P. Valcheva, Influence of the surface treatment with low-energy plasma on graphene and defected graphene layers, OPTICAL AND QUANTUM ELECTRONICS, vol:47, issue:4, 2015, pages:901-912, ISSN (print):0306-8919, ISSN (online):1572-817X, doi:10.1007/s11082-014-0037-6
|
2015
|
|
38
|
T. Milenov, I. Avramova, E. Valcheva, S. Tinchev, Influence of the surface treatment with low-energy
Ar+ plasma on graphene and defected graphene layers, Optical and Quantum Electronics, том:47, 2015, стр.:901-912, Ref, Web of Science
|
2015
|
|
39
|
T. I. Milenov, E. P. Valcheva, S.S. Tinchev, G. Avdeev, Low energy Ar+-plasma thinning and thermal annealing of carbon films to few-layered graphene, Optical and quantum electronics, том:47, 2015, стр.:923-935, Ref, Web of Science
|
2015
|
|
40
|
Milenov, Teodor, Avramova, Ivalina, Valcheva, Evgenia, Tinchev, Savcho, E. P. Valcheva, Low energy -plasma thinning and thermal annealing of carbon films to few-layered graphene, OPTICAL AND QUANTUM ELECTRONICS, vol:47, issue:4, 2015, pages:923-935, ISSN (print):0306-8919, ISSN (online):1572-817X, doi:10.1007/s11082-014-0067-0
|
2015
|
|
41
|
E. Valcheva, G. Yordanov, Low temperature studies of the photoluminescence from colloidal CdSe nanocrystals, Bulg. Chem. Commun., том:47, 2015, стр.:168-172, Ref, Web of Science
|
2015
|
|
42
|
V. Atanasov, S. Russev, L.Lyutov, Y. Zagraniarsky, ..., E. Valcheva, ..., Two dimensional polymerization of graphene oxide: Bottom-up approach, Materials Chemistry and Physics , том:163, 2015, стр.:172-181, Ref, Web of Science
|
2015
|
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43
|
I. Asenova, E. Valcheva, K. Kirilov, A Poturlyan, Influence of the structural inhomogeneity on the luminescent properties of nitride multiple quantum wells grown by MOCVD, Journal of Physics: Conference Series, том:514, 2014, стр.:12054-12057, Web of Science, SCOPUS Quartile: Q3 (2014), PhD
|
2014
|
|
44
|
E. Valcheva, G.Yordanov, Hideyuki Yoshimura, Ts. Ivanov, K. Kirilov, Low temperature studies of the photoluminescence from colloidal CdSe nanocrystals prepared by the hot injection method in liquid paraffin, Colloids and Surfaces A: Physicochemical and Engineering Aspects, том:461, 2014, стр.:158-166, doi:http://dx.doi.org/10.1016/j.colsurfa.2014.07.045, Ref, Web of Science, SCOPUS Quartile: Q2 (2014), в сътрудничество с чуждестранни учени
|
2014
|
|
45
|
I. Asenova, E. Valcheva, D. Arnaudov, Tunnelling and current density in short period strained
AlN/GaN superlattices, Physica E, том:63, 2014, стр.:139-146, Ref, Web of Science, PhD
|
2014
|
|
46
|
E. Valcheva, Електронна структура и процеси на резонансно тунелиране в напрегнати свръхрешетки от AlN/GaN, Annual of Sofia University “St. Kliment Ohridski”, том:107, 2014, стр.:46-57
|
2014
|
|
47
|
S.Tinchev, E. Valcheva, E.Petrova, Low temperature crystallization of diamond-like carbon films to graphene, , Applied Surface Science , том:280, 2013, стр.:512-517, Ref, Web of Science
|
2013
|
|
48
|
E. Valcheva, I. Asenova, K. Kirilov, Negative Differential Resistance in Short Period Strained AlN/GaN Superlattices, Bulgarian Journal of Physics, 2013, Ref, PhD
|
2013
|
|
49
|
V. Donchev, D. Nesheva, D. Todorova, K. Germanova, E. Valcheva, Characterization of Si–SiOx nanocomposite layers by comparative analysis of computer simulated and experimental infra-red transmission spectra, Thin Solid Films , том:520, брой:6, 2012, стр.:2085-2091, Ref, Web of Science, PhD
|
2012
|
|
50
|
S. Alexandrova, A. Szekeres, E. Valcheva, Mechanical stress in silicon oxides grown on hydrogen implanted Si, , Physica Status Solidi (C) Current Topics in Solid State Physics , том:9, 2012, стр.:2203-2206, Ref, Web of Science
|
2012
|
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51
|
I.S.Asenova, E. P. Valcheva, Polarization dependence of III-nitride superlattice transmission coefficient, , Journal of Physics Conference Series, том:398, 2012, стр.:12014-12018, Ref, PhD
|
2012
|
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52
|
K. Christova,, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, S. Reynolds, C. Longeaud, P. Roca i Cabarrocas, Stress characterization of thin microcrystalline silicon films
, J Rev Phys, том:6, 2012, стр.:106-112, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2012
|
|
53
|
A. Gjevori, J.W. Gerlach,, D. Manova, W. Assmann, W. Assmann, E. Valcheva, S. Mändl, Influence of Auxiliary Plasma Source and Ion Bombardment on Stoichiometry of TiO2 Thin Films, Surface & Coatings Technology , том:205, 2011, стр.:232-234, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2011
|
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54
|
Vilalta-Clemente, G. R. Mutta, M. P. Chauvat, M. Morales, J. L. Doualan, P. Ruterana, J. Grandal, M. A. Sánchez-García, E. Valcheva, K. Kirilov, Investigation of InN
layers grown by molecular beam epitaxy on GaN templates, Physica Status Solidi (A), том:207, брой:5, 2010, стр.:1079-1082, doi:10.1002/pssa.200983117, Ref, Web of Science, SCOPUS Quartile: Q1 (2010), в сътрудничество с чуждестранни учени
|
2010
|
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55
|
S.Tinchev, P. Nikolova, E. Valcheva, Y. Dyulgerska, E. Petrova,, Laser - indused modification of hydrogenated amorphous carbon films , Journal of Physics: Conference Series, том:253, 2010, стр.:12039-12041, Ref, Web of Science
|
2010
|
|
56
|
K. Christova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, C. Longeaud, S. Reynolds, P. Roca i cabarrocas, Structure-related strain and stress in thin hydrogenated microcrystalline silicon films, Journal of Physics: Conference Series, том:253, 2010, стр.:12056-0, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2010
|
|
57
|
P. Ruterana, A. L. Syrkin, E. Monroy, E. Valcheva, K. Kirilov, The microstructure and
properties of InN layers, Physica Status Solidi (C), том:7, брой:5, 2010, стр.:1301-1304, doi:10.1002/pssc.200983123, Ref, Web of Science, SCOPUS Quartile: Q3 (2010), в сътрудничество с чуждестранни учени
|
2010
|
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58
|
Valcheva E., M. Baleva, G. Zlateva, Thickness Dependence of Surface and Interface Phonon-Polariton Modes in InN/AlN Nanolayers, Solid State Phenomena , том:159, 2010, стр.:77-80, Ref, IR , SCOPUS, SJR (0.215 - 2010), SCOPUS Quartile: Q3 (2010)
|
2010
|
|
59
|
Manova, Darina, Gjevori, Altin, Haberkorn, Frank, Lutz, Johanna, Dimitrov, Slavcho, Gerlach, Juergen W., Valcheva, Evgenia, E. P. Valcheva, Formation of hydrophilic and photocatalytically active TiO2 thin films by plasma based ion implantation and deposition, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol:206, issue:1, 2009, pages:71-77, ISSN (print):1862-6300, doi:10.1002/pssa.200723600
|
2009
|
|
60
|
D. Manova, ..., E. Valcheva, S. Maendel, Formation of photocatalytic active TiO2 thin films by plasma based ion implantation and deposition, PHYS STATUS SOLIDI A, том:206, 2009, стр.:71-77, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2009
|
|
61
|
D. Todorova, E. Valcheva, V. Donchev, D. Manova, S. Maendel, Optical properties of AlN/SiO2 nanocomposite layers, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, том:11, брой:9, 2009, стр.:1296-1298, Ref, Web of Science, в сътрудничество с чуждестранни учени, MSc
|
2009
|
|
62
|
S.S. Tinchev, S. Alexandrova, E. Valcheva, Single Electron Tunnelling as a Possible Conduction Mechanism in Diamond-Like Carbon Film, Bulg. J. Phys, том:36, 2009, стр.:70-78
|
2009
|
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63
|
E. Valcheva, M. Baleva, G. Zlateva, Surface and Interface-related Phonon Modes in InN/AlN Nanolayer, Materials Science and Engineering B , том:165, 2009, стр.:153-155, Ref, Web of Science
|
2009
|
|
64
|
E. Valcheva, K. Kirilov, B. Monemar, H. Amano, I. Akasaki, Tunneling effects in short
period strained AlN/GaN superlattices, Phys. Status Solidi C, том:6, брой:S2, 2009, стр.:751-754, doi:10.1002/pssc.200880880, Ref, Web of Science, SCOPUS Quartile: Q3 (2009), в сътрудничество с чуждестранни учени
|
2009
|
|
65
|
E. Valcheva, Dimitrov S., Manova D., Mandl S., Alexandrova S., AlN nanoclusters formation by plasma ion immersion implantation, Surface and Coatings Technology, том:11, 2008, стр.:2319-2322, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2008
|
|
66
|
E. Valcheva, S. Dimitrov, D. Manova, S. Mändl, S. Alexandrova, AlN Nanoclusters Formation by Plasma Ion Immersion Implantation, Surf. and Coat. Technol, том:202, брой:11, 2008, стр.:2319-2322, Ref, Web of Science, в сътрудничество с чуждестранни учени, PhD
|
2008
|
|
67
|
S. Dimitrov, E. Valcheva, V. Donchev, Electronic states properties in GaN/AlxGa1-xN heterostructures with graded interfaces, J. Optoel. & Adv. Mat., том:9, брой:1, 2007, стр.:194-196, Ref, Web of Science, PhD
|
2007
|
|
68
|
Valcheva, E., Birch, J., Persson, P. O. A., Tungasmita, S., E. P. Valcheva, Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering, JOURNAL OF APPLIED PHYSICS, vol:100, issue:12, 2006, ISSN (print):0021-8979, ISSN (online):1089-7550, doi:10.1063/1.2402971
|
2006
|
|
69
|
Darakchieva V., E. Valcheva, Paskov P.P., Schubert M., Paskova T, Monemar B., Amano H., Akasaki I., Phonon mode behavior in strained wurtzite AlN/GaN superlattices, Physical Review B, том:11, 2005, Ref, Web of Science
|
2005
|
|
70
|
T. Paskova, Darakchieva V., Paskov P.P, Birch J., E. Valcheva, ..., Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers, Journal of Crystal Growth, том:1, 2005, стр.:55-61, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2005
|
|
71
|
Paskova, T, Paskov, PP, Goldys, EM, Valcheva, E, Darakchieva, V, Sodervall, U, Godlewski, M, Zielinski, M, Hautakangas, S, E. P. Valcheva, Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy, JOURNAL OF CRYSTAL GROWTH, vol:273, issue:1-2, 2004, pages:118-128, ISSN (print):0022-0248, ISSN (online):1873-5002, doi:10.1016/j.jcrysgro.2004.09.025
|
2004
|
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72
|
Darakchieva V., Paskov P.P., E. Valcheva, Paskova T., Monemar B., Schubert M., Lu H., Schaff W.J., Schaff W.J., Deformation potentials of the E 1 (TO) and E 2 modes of InN, Applied Physics Letters, том:18, 2004, стр.:3636-3638, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2004
|
|
73
|
Arnaudov B., Paskova T., Paskov P.P., Magnusson B., E. Valcheva, Monemar B., (...), Akasaki I., Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels, Physical Review B , том:11, 2004, стр.:1152161-1152165, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2004
|
|
74
|
Kasic A., E. Valcheva, Monemar B., Lu H., Schaff W, InN dielectric function from the midinfrared to the ultraviolet range, Physical Review B, том:11, 2004, стр.:1152171-1152178, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2004
|
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75
|
Paskova, T, Darakchieva, V, Valcheva, E, Paskov, PP, Monemar, B, E. P. Valcheva, In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques, JOURNAL OF CRYSTAL GROWTH, vol:257, issue:1-2, 2003, pages:1-6, ISSN (print):0022-0248, ISSN (online):1873-5002, doi:10.1016/S0022-0248(03)01374-5
|
2003
|
|
76
|
Darakchieva V., Paskov P.P., Paskova T., E. Valcheva, Monemar B., Heuken M., Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy, Applied Physics Letters, том:5, 2003, стр.:703-705, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2003
|
|
77
|
Arnaudov B., Paskova T., Evtimova S., E. Valcheva, Heuken M., Monemar B., Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity, Physical Review B , том:4, 2003, стр.:453141-4531410, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2003
|
|
78
|
E. Valcheva, Paskova T., Monemar B., Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers, Journal of Crystal Growth, том:1-2, 2003, стр.:19-26, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2003
|
|
79
|
E. Valcheva, Paskova T., Persson P.O.A., Hultman L., Monemar B., Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy, Applied Physics Letters, том:9, 2002, стр.:1550-1552, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2002
|
|
80
|
T. Paskova, E. Valcheva, Birch J., Tungasmita S., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, Journal of Crystal Growth, том:3-4, 2001, стр.:381-386, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2001
|
|
81
|
T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P.-O.A. Persson, P. P. Paskov, S. Evtimova, M. Abrashev, B. Monemar, Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, Journal of Crystal Growth, том:230, 2001, стр.:381-386, doi:10.1016/S0022-0248(01)01264-7, Ref, IF, IF (1.283 - 2001), SCOPUS Quartile: Q1 (2001), в сътрудничество с чуждестранни учени
|
2001
|
|
82
|
E. Valcheva, T. Paskova, M. V. Abrashev, P. P. Paskov, P. O. Å. Persson, E. M. Goldys, R. Beccard, M. Heuken, Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, Journal of Applied Physics, том:90, 2001, стр.:6011-6016, doi:10.1063/1.1415363, Ref, IF, IF (2.128 - 2001), SCOPUS Quartile: Q1 (2001), в сътрудничество с чуждестранни учени
|
2001
|
|
83
|
E. Valcheva, T. Paskova, M. V. Abrashev, P. A. O. Persson, P. P. Paskov, E. M. Goldys, R. Beccard, M. Heuken, B. Monemar, Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, Materials Science and Engineering: B, том:82, брой:1-3, 2001, стр.:35-38, doi:10.1016/S0921-5107(00)00676-0, Ref, IF, IF (1.022 - 2001), в сътрудничество с чуждестранни учени
|
2001
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|
84
|
Ratnikov V., Kyutt R., Shubina T., Paskova T., E. Valcheva, Monemar B., Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films, Journal of Applied Physics,, том:11, 2000, стр.:6252-6259, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2000
|
|
85
|
Paskova, T, Valcheva, E, Birch, J, Tungasmita, S, Persson, POA, Beccard, R, Heuken, M, E. P. Valcheva, Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, JOURNAL OF APPLIED PHYSICS, vol:88, issue:10, 2000, pages:5729-5732, ISSN (print):0021-8979
|
2000
|
|
86
|
E. Valcheva, Paskova T, Tungasmita S., Persson P., Birch J., Svedberg E.B., Hultman L., Monemar B., Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AIN buffer, Applied Physics Letters, том:14, 2000, стр.:1860-1862, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2000
|
|
87
|
Valcheva, E, Paskova, T, Tungasmita, S, Persson, POA, Birch, J, Svedberg, EB, Hultman, L, E. P. Valcheva, Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer, APPLIED PHYSICS LETTERS, vol:76, issue:14, 2000, pages:1860-1862, ISSN (print):0003-6951, ISSN (online):1077-3118
|
2000
|
|
88
|
Valcheva, E, Paskova, T, Ivanov, IG, Yakimova, R, Wahab, Q, Savage, S, Nordell, N, E. P. Valcheva, B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol:17, issue:3, 1999, pages:1040-1044, ISSN (print):1071-1023
|
1999
|
|
89
|
Dimitrova V., Manova D., E. Valcheva, Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions, Materials Science and Engineering B, том:1, 1999, стр.:1-4, Ref, Web of Science
|
1999
|
|
90
|
E. P. Valcheva, Characterization of GaAs/AlxGa1-xAs heterointerface defects by means of capacitive measurements, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol:65, issue:1, 1997, pages:39-42, ISSN (print):0947-8396
|
1997
|
|
91
|
E. P. Valcheva, Spectroscopic studies of native oxide formation on a SiO2-InSb interface, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, vol:15, issue:5, 1997, pages:2489-2491, ISSN (print):0734-2101
|
1997
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|
92
|
Valcheva, E, Paskova, T, E. P. Valcheva, Antimony doped GaAs: A model of dominant current transport mechanism, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol:14, issue:6, 1996, pages:3582-3587
|
1996
|
|
93
|
Paskova, T, Valcheva, E, E. P. Valcheva, Antimony doped GaAs: Role of the isoelectronic dopant in defect evolution, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol:14, issue:3, 1996, pages:1729-1735, ISSN (print):1071-1023
|
1996
|
|
94
|
PASKOVA, T, YAKIMOVA, R, VALCHEVA, E, E. P. Valcheva, CHARACTERIZATION OF MOVPE-GROWN GAAS-LAYERS BY C-V ANALYSIS, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol:56, issue:1, 1993, pages:69-72, ISSN (print):0947-8396
|
1993
|
|
95
|
S. Russev, E. Valcheva, K. Germanova, Investigation of the system InSb/SiO2 by spectroscopic multiangle ellipsometry, Thin Solid Films, том:233, брой:1-2, 1993, стр.:231-235, doi:10.1016/0040-6090(93)90097-9, Ref, Web of Science
|
1993
|
|
96
|
VALCHEVA, EP, E. P. Valcheva, INTERFACE FORMATION AND ELECTRONIC-STRUCTURE OF PECVD SIO2-INSB STRUCTURES, SUPERLATTICES AND MICROSTRUCTURES, vol:10, issue:3, 1991, pages:319-322, ISSN (print):0749-6036
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1991
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97
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VALCHEVA, EP, E. P. Valcheva, PREDEPOSITION PLASMA TREATMENT OF INSB SURFACE IN PECVD SIO2-INSB STRUCTURES, MATERIALS LETTERS, vol:7, issue:12, 1989, pages:465-467, ISSN (print):0167-577X
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1989
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98
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GERMANOVA, KG, E. P. Valcheva, CHARACTERIZATION OF INTERFACE ELECTRICAL-PROPERTIES IN SIO2/INSB METAL-INSULATOR SEMICONDUCTOR STRUCTURES PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION, THIN SOLID FILMS, vol:148, issue:3, 1987, pages:243-250, ISSN (print):0040-6090
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1987
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| Статия в поредица |
|
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T. Paskova, E. Valcheva, B. Monemar, Thick GaN Films Grown on Sapphire: Defects in Highly Mismatched Systems, Defects and Diffusion in Semiconductors IV, том:Defect and Diffusion Forum, брой:200-202 , редактор/и:D.J. Fisher, издателство:Trans Tech Publications, 2002, стр.:1-28, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2002
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| Статия в сборник (на конференция и др.) |
|
1
|
E. Valcheva, K. Kirilov, A. Dikovska, T. Milenov, Low temperature electrical transport in thin carbon films deposited on SiO2/Si substrates by pulsed laser deposition, Journal of Physics: Conference Series, 2023, ISSN (print):1742-6588, ISSN (online):1742-6596, doi:10.1088/1742-6596/2487/1/012038, Ref, IR , SCOPUS, SJR (0.183 - 2022), SCOPUS Quartile: Q4 (2020)
|
2023
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|
2
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T. Milenov, D. Karaivanova, A. Dikovska, K. Kirilov, E. Valcheva, Some Initial Results on Modification of aC:H Films by Pulsed Laser Irradiation, Journal of Physics: Conference Series, 2023, ISSN (print):1742-6588, ISSN (online):1742-6596, doi:10.1088/1742-6596/2487/1/012009, Ref, IR , SCOPUS, SJR (0.183 - 2022), SCOPUS Quartile: Q4 (2020)
|
2023
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3
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I. Balchev, T. Nurgaliev, I. Kostadinov, L. Lakov, M. Aleksandrova, G. Adveev, E. Valcheva, S. Russev, K. Genkov, T. Milenov, RF magnetron sputtering of Bi12TiO20 thin films on various substrates, Journal of Physics: Conference Series, 2021, doi:10.1088/1742-6596/1859/1/012060, Ref, Web of Science
|
2021
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4
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I. I. Balchev, A.S. Nikolov, N. Stankova, I. Avramova, E. Valcheva, D. Karashanova, I. Kostadinov, S. Russev, T. Milenov, Ablation of graphite in water by Nd:YAG laser, Proceedings of SPIE Volume: 11047, Article Number: UNSP 110470E, editor/s:Tanja Dreischuh, Latchezar Avramov, Publisher:Society of Photo-optical Instrumentation Engineers, 2019, pages:1-4, doi:DOI: 10.1117/12.2516368, Ref, IR , SCOPUS, SJR (0.86 - )
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2019
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5
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E. Valcheva, K. Kirilov, B. Arnaudov, N. Bundaleska, J. Henriques, S. Russev, E. Tatarova, Electrical conductivity of free-standing N-graphene sheets, AIP Conference Proceedings, 2019, pages:160038-0, ISBN:0735418039, doi:10.1063/1.5091365, Ref, IR , SCOPUS, SJR (0.19 - 2019), International
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2019
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|
6
|
A. Dikovska, I. Avramova, L. Tzonev, P. Terziiska, [...], J. Mladenoff, [...], E. Valcheva, S. Kolev, T. Milenov, Ellipsometric study of thin carbon films deposited by pulsed laser deposition,, Proceedings of SPIE Volume: 11047 Article Number: UNSP 110470N, editor/s:Tanja Dreischuh, Latchezar Avramov, Publisher:Society of Photo-optical Instrumentation Engineers, 2019, pages:1-4, Ref, IR , SCOPUS, SJR (0.86 - )
|
2019
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|
7
|
M. Milanova, V. Donchev, P. Terziyska, E. Valcheva, S. Georgiev, K. Kirilov, I. Asenova, N. Shtinkov, Y. Karmakov, I. G. Ivanov, Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications, AIP Conference Proceedings, 2019, pages:140004-0, doi:https://doi.org/10.1063/1.5091319, Ref, SCOPUS, SJR (0.19 - 2019), International, PhD
|
2019
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|
8
|
L. Tzonev, D. Pishinkov, I. Avramova, G. Avdeev, E. Valcheva, J. Mladenov, K. Genkov, A. Zyapkov, S. Russev, S. Kolev, Modification of carbon black by thermal treatment in air-atmosphere, AIP Conference Proceedings, издателство:AIP Publishing, 2019, стр.:160030-0, ISBN:0735418039, doi:https://doi.org/10.1063/1.5091357, Ref, IR , SCOPUS, SJR (0.18 - 2018), PhD
|
2019
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|
9
|
J. Mladenoff, L. Tzonev, K. Kirilov, I. Avramova, G. Avdeev, E. Valcheva, S. Russev, B. Arnaudov, P. Terziiska, T. Milenov, Study of the initial stages of deposition of graphene-like films by sublimation of amorphous carbon, AIP Conference Proceedings, editor/s:Mishonov T.M.,Varonov A.M., Publisher:American Institute of Physics Inc., 2019, pages:160029-0, ISSN (online):0094243X, ISBN:978-073541803-5, doi:10.1063/1.5091356, Ref, IR , SCOPUS, SJR (0.19 - 2019)
|
2019
|
|
10
|
A. Nikolov, I. Balchev, N. Stankova, I. Avramova, E. Valcheva, S. Russev, [...], T. Milenov, Synthesis of submicron-dispersed carbon phases in water by Nd:YAG laser ablation of graphite, Proceedings of SPIE Volume: 11047 Article Number: UNSP 110470K, editor/s:Tanja Dreischuh, Latchezar Avramov, Publisher:Society of Photo-optical Instrumentation Engineers, 2019, pages:1-4, doi:doi:10.1117/12.2516582, Ref, IR , SCOPUS, SJR (0.86 - )
|
2019
|
|
11
|
I. Avramova, A. Dikovska, E. Valcheva, [...], T. Milenov, X-ray photoelectron spectroscopy characterization of amorphous and nanosized thin carbon films, Proceedings of SPIE Volume: 11047 Article Number: UNSP 110470D, editor/s:Tanja Dreischuh, Latchezar Avramov, Publisher:Society of Photo-optical Instrumentation Engineers, 2019, pages:1-4, doi:doi: 10.1117/12.2516243, Ref, IR , SCOPUS, SJR (0.86 - )
|
2019
|
|
12
|
K. Kirilov, E. Valcheva, V. Donchev, K. Lozanova, Investigation of InGaN/GaN nanostructures for Leds, Proceedings VII BALKAN CONFERENCE ON LIGHTING, BalkanLight 2018, издателство:Издателска къща "Св. Иван Рилски", 2018, стр.:13-16, PhD
|
2018
|
|
13
|
Valcheva, E., E. P. Valcheva, Low temperature photoluminescence studies of colloidal CdSe nanocrystals, BULGARIAN CHEMICAL COMMUNICATIONS, vol:47, issue:B, 2015, pages:169-173, ISSN (print):0324-1130
|
2015
|
|
14
|
Alexandrova, S., Szekeres, A., E. P. Valcheva, Silicon surface modified by H+ ion plasma immersion implantation and thermal oxidation, BULGARIAN CHEMICAL COMMUNICATIONS, vol:47, issue:B, 2015, pages:63-70, ISSN (print):0324-1130
|
2015
|
|
15
|
K. Kirilov, A. Tzonev, E. Valcheva, Russev S., Simple attachment to optical microscope for micro-photoluminescence measurements, 10th International Conference on Nanosciences & Nanotechnologies – NN13, 2013
|
2013
|
|
16
|
Gjevori, A., Gerlach, J. W., Manova, D., Assmann, W., Valcheva, E., E. P. Valcheva, Influence of auxiliary plasma source and ion bombardment on growth of TiO2 thin films, SURFACE & COATINGS TECHNOLOGY, vol:205, 2011, ISSN (print):0257-8972, doi:10.1016/j.surfcoat.2011.02.046
|
2011
|
|
17
|
Tinchev, Savcho, Nikolova, Petranka, Valcheva, Evgenia, Dyulgerska, Yuliana, E. P. Valcheva, Laser - induced modification of hydrogenated amorphous carbon films, 16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS, vol:253, 2010, ISSN (print):1742-6588, ISBN:*****************, doi:10.1088/1742-6596/253/1/012039
|
2010
|
|
18
|
D. Todorova, V. Donchev, D. Nesheva, E. Valcheva, Computer simulation of infra-red
transmission spectra of SiO2 films containing amorphous Si nanoparticles
, Nanoscience and Nanotechnology, 9, редактор/и:E. Balabanova and I. Dragieva, 2009, стр.:17-20, MSc
|
2009
|
|
19
|
E. Krusteva, R. Kotsilkova, E. Valcheva, V. Donchev, E. Ivanov, T. Dobreva, Effect of processing and external magnetic field on the structure of epoxy/multiwall carbon nanotube composites,, Nanoscience & Nanotechnology 9, редактор/и:E.Balabanova, I. Dragieva, 2009, стр.:156-159
|
2009
|
|
20
|
Valcheva, E., Baleva, M., E. P. Valcheva, Surface and interface-related phonon modes in InN/AlN nanolayer structures, MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, vol:165, issue:3, 2009, pages:153-155, ISSN (print):0921-5107, ISSN (online):1873-4944, doi:10.1016/j.mseb.2009.09.016
|
2009
|
|
21
|
Valcheva, E., Dimitrov, S., Manova, D., Maendl, S., E. P. Valcheva, AIN nanoclusters formation by plasma ion immersion implantation, SURFACE & COATINGS TECHNOLOGY, vol:202, issue:11, 2008, pages:2319-2322, ISSN (print):0257-8972, doi:10.1016/j.surfcoat.2007.08.051
|
2008
|
|
22
|
T. Paskova, A.D. Hanser, E. Preble, ..., E. Valcheva, ..., Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis, Proc. SPIE 6894, 2008, Ref, в сътрудничество с чуждестранни учени
|
2008
|
|
23
|
E. Valcheva, K. Kirilov, M. Abrashev, R. Božek, Evolution of structural and optical
properties of thin epitaxial InN grown by MBE, Nanoscience&Nanotechnology 8, редактор/и:E.Balabanova, I. Dragieva, издателство:Heron Press, 2008, стр.:137-140, в сътрудничество с чуждестранни учени
|
2008
|
|
24
|
Tinchev, S., Dyulgerska, Y., Nikolova, P., Alexandrova, S., E. P. Valcheva, Electrical properties of (a-C : H)/Si and (a-C : H)/Ti heterostructures, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol:9, issue:2, 2007, pages:386-389, ISSN (print):1454-4164, ISSN (online):1841-7132
|
2007
|
|
25
|
Alexandrova, S., Szekeres, A., Valcheva, E., E. P. Valcheva, Electrically active defect centers in MOS structures with nanosized SiO2 thermally grown on plasma hydrogenated silicon, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol:9, issue:2, 2007, pages:398-401, ISSN (print):1454-4164, ISSN (online):1841-7132
|
2007
|
|
26
|
Valcheva, E., Dimitrov, S., Monemar, B., Haratizadeh, H., Persson, P. O. A., Amano, H., E. P. Valcheva, Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces, ACTA PHYSICA POLONICA A, vol:112, issue:2, 2007, pages:395-400, ISSN (print):0587-4246
|
2007
|
|
27
|
Valcueva, E., Manova, D., Mandl, S., Alexandrova, S., Lutz, J., E. P. Valcheva, Ion beam synthesis of AlN nanostructured thin films, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol:9, issue:1, 2007, pages:166-169, ISSN (print):1454-4164, ISSN (online):1841-7132
|
2007
|
|
28
|
Haratizadeh, H., Monemar, B., Paskov, Plamen P., Holtz, Per Olof, Valcheva, E., Persson, P., Iwaya, M., Kamiyama, S., Amano, H., E. P. Valcheva, Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol:244, issue:5, 2007, pages:1727-1734, ISSN (print):0370-1972, ISSN (online):1521-3951, doi:10.1002/pssb.200675106
|
2007
|
|
29
|
Kaschieva, S, Halova, E, Vlaikova, E, Alexandrova, S, Valcheva, E, E. P. Valcheva, Investigation of p-type MOS structure irradiated with 23 MeV electrons, PLASMA PROCESSES AND POLYMERS, vol:3, issue:2, 2006, pages:237-240, ISSN (print):1612-8850, doi:10.1002/ppap.200500080
|
2006
|
|
30
|
Valcheva, E, Alexandrova, S, Dimitrov, S, Lu, H, E. P. Valcheva, Recombination processes with and without momentum conservation in degenerate InN, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol:203, issue:1, 2006, pages:75-79, ISSN (print):1862-6300, ISSN (online):1862-6319, doi:10.1002/pssa.200563521
|
2006
|
|
31
|
Paskova, T, Darakchieva, V, Paskov, PP, Birch, J, Valcheva, E, Persson, POA, Arnaudov, B, Tungasmita, S, E. P. Valcheva, Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties, PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, vol:2, issue:7, 2005, pages:2027-2031, ISSN (print):1862-6351, ISBN:*************, doi:10.1002/pssc.200461481
|
2005
|
|
32
|
Arnaudov, B, Paskova, T, Paskov, PP, Magnusson, B, Valcheva, E, Monemar, B, Lu, H, Schaff, W, Amano, H, E. P. Valcheva, On the nature of near bandedge luminescence of InN epitaxial layers, Physics of Semiconductors, Pts A and B, vol:772, 2005, pages:285-286, ISSN (print):0094-243X, ISBN:0-7354-0257-4
|
2005
|
|
33
|
Arnaudov, B, Paskova, T, Paskov, PP, Magnusson, B, Valcheva, E, Monemar, B, Lu, H, Schaff, WJ, Amano, H, E. P. Valcheva, Free-to-bound radiative recombination in highly conducting InN epitaxial layers, SUPERLATTICES AND MICROSTRUCTURES, vol:36, issue:4-6, 2004, pages:563-571, ISSN (print):0749-6036, doi:10.1016/j.spmi.2004.09.013
|
2004
|
|
34
|
Paskova, T, Valcheva, E, Paskov, PP, Monemar, B, Roskowski, AM, Davis, RF, Beaumont, B, E. P. Valcheva, HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates, DIAMOND AND RELATED MATERIALS, vol:13, issue:4-8, 2004, pages:1125-1129, ISSN (print):0925-9635, ISSN (online):1879-0062, doi:10.1016/j.diamond.2003.10.072
|
2004
|
|
35
|
Paskova, T, Darakchieva, V, Valcheva, E, Paskov, PP, Ivanov, IG, Monemar, B, Bottcher, T, Roder, C, E. P. Valcheva, Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending, JOURNAL OF ELECTRONIC MATERIALS, vol:33, issue:5, 2004, pages:389-394, ISSN (print):0361-5235, ISSN (online):1543-186X
|
2004
|
|
36
|
Darakchieva, V, Paskov, PP, Valcheva, E, Paskova, T, Schubert, M, Bundesmann, C, Lu, H, Schaff, WJ, E. P. Valcheva, Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties, SUPERLATTICES AND MICROSTRUCTURES, vol:36, issue:4-6, 2004, pages:573-580, ISSN (print):0749-6036, doi:10.1016/j.spmi.2004.09.014
|
2004
|
|
37
|
Monemar, B, Paskov, PP, Haradizadeh, H, Bergman, JP, Valcheva, E, Darakchieva, V, Arnaudov, B, Paskova, T, Holtz, PO, E. P. Valcheva, Optical investigation of AlGaN/GaN quantum wells and superlattices, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol:201, issue:10, 2004, pages:2251-2258, ISSN (print):1862-6300, ISSN (online):1862-6319, doi:10.1002/pssa.200404849
|
2004
|
|
38
|
Paskova, T, Paskov, PP, Valcheva, E, Darakchieva, V, Birch, J, Kasic, A, Arnaudov, B, Tungasmita, S, E. P. Valcheva, Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol:201, issue:10, 2004, pages:2265-2270, ISSN (print):1862-6300, ISSN (online):1862-6319, doi:10.1002/pssa.200404818
|
2004
|
|
39
|
Monemar, B, Haratizadeh, H, Paskov, PP, Bergman, JP, Valcheva, E, Arnaudov, B, Kasic, A, Holtz, PO, Pozina, G, E. P. Valcheva, Radiative recombination processes in Al0.07Ga0.93N/GaN multiple quantum well structures, role of hole localisation, 5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, 2004, pages:2500-2503, ISBN:3-527-40570-4, doi:10.1002/pssc.200404988
|
2004
|
|
40
|
Valcheva, E, Paskova, T, Monemar, B, Roskowski, AM, E. P. Valcheva, Defect and emission distributions in thick HVPE-GaN layers grown on PENDEO templates, 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, vol:0, issue:7, 2003, pages:2424-2427, ISSN (print):1862-6351, ISBN:3-527-40489-9, doi:10.1002/pssc.200303369
|
2003
|
|
41
|
Paskova, T, Darakchieva, V, Valcheva, E, Paskov, PP, Monemar, B, E. P. Valcheva, Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parameters, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol:240, issue:2, 2003, pages:318-321, ISSN (print):0370-1972, doi:10.1002/pssb.200303368
|
2003
|
|
42
|
Valcheva, E, Paskova, T, Radnoczi, GZ, Hultman, L, Monemar, B, Amano, H, E. P. Valcheva, Growth-induced defects in AlN/GaN superlattices with different periods, PHYSICA B-CONDENSED MATTER, vol:340, 2003, pages:1129-1132, ISSN (print):0921-4526, ISSN (online):1873-2135, doi:10.1016/j.physb.2003.09.175
|
2003
|
|
43
|
Darakchieva, V, Paskov, PP, Schubert, M, Valcheva, E, Paskova, T, Arwin, H, Monemar, B, Amano, H, E. P. Valcheva, Strain evolution and phonons in AlN/GaN superlattices, GAN AND RELATED ALLOYS - 2003, vol:798, 2003, pages:741-746, ISSN (print):0272-9172, ISBN:1-55899-736-9
|
2003
|
|
44
|
Valcheva, E, Paskova, T, E. P. Valcheva, Extended defects in GaN films grown at high growth rate, JOURNAL OF PHYSICS-CONDENSED MATTER, vol:14, issue:48, 2002, pages:13269-13275, ISSN (print):0953-8984, ISSN (online):1361-648X
|
2002
|
|
45
|
Paskova, T, Paskov, PP, Darakchieva, V, Goldys, EM, Sodervall, U, Valcheva, E, Arnaudov, B, E. P. Valcheva, Free-standing HVPE-GaN quasi-substrates: Impurity and strain distributions, INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, pages:209-213, ISBN:3-527-40434-1
|
2002
|
|
46
|
Valcheva, E, Paskova, T, Persson, POA, E. P. Valcheva, Nanopipes in thick GaN films grown at high growth rate, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol:194, issue:2, 2002, pages:532-535, ISSN (print):0031-8965
|
2002
|
|
47
|
Alexandrova, S, Kaschieva, S, Halova, E, Valcheva, E, E. P. Valcheva, Sensitivity of hydrogen plasma-treated SiO2/Si structures to high-energy electron irradiation, VACUUM, vol:69, issue:1-3, 2002, pages:103-106, ISSN (print):0042-207X
|
2002
|
|
48
|
Valcheva, E, Paskova, T, Abrashev, MV, Persson, PAO, Paskov, PP, Goldys, EM, Beccard, R, Heuken, M, Monemar, B, Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol:82, issue:1-3, 2001, pages:35-38, ISSN (print):0921-5107
|
2001
|
|
49
|
Paskova, T, Paskov, PP, Goldys, EM, Darakchieva, V, Sodervall, U, Godlewski, M, Zielinski, M, Valcheva, E, Carlstrom, CF, E. P. Valcheva, Mass transport growth and properties of hydride vapour phase epitaxy GaN, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol:188, issue:1, 2001, pages:447-451, ISSN (print):0031-8965
|
2001
|
|
50
|
Florescu, DI, Pollak, FH, Paskova, T, Valcheva, E, E. P. Valcheva, Dislocation/grain boundary effects on the thermal conductivity of hydride vapor phase epitaxy grown GaN/sapphire (0001), 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, pages:467-472, ISBN:0-7803-6258-6
|
2000
|
|
51
|
Paskova, T, Tungasmita, S, Valcheva, E, Svedberg, EB, Arnaudov, B, Evtimova, S, Persson, PA, Henry, A, Beccard, R, Heuken, M, Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates', MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol:5, 2000, ISSN (print):1092-5783
|
2000
|
|
52
|
Paskova, T, Valcheva, E, Ivanov, IG, Yakimova, R, Savage, S, Nordell, N, E. P. Valcheva, 6H-SiC crystallinity behaviour upon B implantation studied by Raman scattering, SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, vol:264-2, 1998, pages:741-744, ISSN (print):0255-5476, ISBN:0-87849-790-0
|
1998
|
|
53
|
Valcheva, E, Paskova, T, Ivanov, IS, Yakimova, R, Wahab, Q, Savage, S, Nordell, N, E. P. Valcheva, Electrical activation of B implant in 6H-SiC, SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, vol:264-2, 1998, pages:705-708, ISSN (print):0255-5476, ISBN:0-87849-790-0
|
1998
|
|
54
|
RUSSEV, S, VALCHEVA, E, GERMANOVA, K, INVESTIGATION OF THE SYSTEM INSB-SIO2 BY SPECTROSCOPIC MULTIANGLE ELLIPSOMETRY, THIN SOLID FILMS, vol:233, issue:1-2, 1993, pages:231-235, ISSN (print):0040-6090
|
1993
|
|
55
|
S. Russev, E. Valcheva, K. Germanova, A comprehensive study of interface formation in InSb MIS structures, Proceedings of the Seventh ICSMP: Electronic and Optoelectronic Materials for the 21st Century, 1992, стр.:617-621
|
1992
|
| Студия в научно списание |
|
|
Paskova, T, Valcheva, E, E. P. Valcheva, Thick GaN films grown on sapphire: Detects in highly mismatched systems, DEFECTS AND DIFFUSION IN SEMICONDUCTORS, vol:200-2, 2002, pages:1-28, ISSN (print):1012-0386, ISBN:3-908450-67-5
|
2002
|
| Участие в конференция |
|
1
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Секционен доклад, Евгения Вълчева, LED-осветлението: колко Нобелови награди са необходими, за да ни е светло?
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2016
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2
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Секционен доклад, Евгения Вълчева, Blue LEDs - the Nobel Prize and Bulgarian scientist’s participation
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2015
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3
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Секционен доклад, Евгения Вълчева, Сините светодиоди: от нобеловата награда до българското участие
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2015
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4
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Секционен доклад, Евгения Вълчева, Сините светодиоди: Нобеловата награда по физика за 2014 г
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2015
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5
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Секционен доклад, Евгения Вълчева, Сините светодиоди - революция в осветлението
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2015
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6
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Секционен доклад, Евгения Вълчева, The blue LEDs – problems and solutions
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2015
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7
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Секционен доклад, Евгения Вълчева, Сините фотодиоди – от Нобеловата награда по физика 2014 до българското участие
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2015
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8
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Секционен доклад, Евгения Вълчева, Radiative recombination processes in AlGaN/GaN multiple quantum well structures - common building blocks for the blue LEDs
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2015
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9
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Секционен доклад, Евгения Вълчева, Сините светодоиди: Нобеловата награда по физика за 2014г.
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2015
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10
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Секционен доклад, Евгения Вълчева, Сините светодиоди – революция в осветителните технологии
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2015
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11
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Секционен доклад, Евгения Вълчева, GaN/AlN superlattices as emitters in the Terahertz range
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2015
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12
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Секционен доклад, Евгения Вълчева, Овладяването на синята светлина в полза на човечеството
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2014
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13
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Секционен доклад, Евгения Вълчева, Сините светодиоди – революция в осветителните технологии
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2014
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14
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Секционен доклад, Евгения Вълчева, Квазикристалите – как се рушат постулати в науката
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2014
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15
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Секционен доклад, Евгения Вълчева, Планарни технологии за получаване на наноструктурирани тънки слоеве и техните приложения
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2014
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16
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Секционен доклад, Евгения Вълчева, Сините светодиоди – от Нобеловата награда до българското участие
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2014
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17
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Секционен доклад, Евгения Вълчева, Квазикристали - Нобелова награда по химия за 2011
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2012
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18
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Секционен доклад, Евгения Вълчева, Resonant tunneling effects in short period strained GaN/AlN superlattices
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2010
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