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Научни приноси на ас. Иглика Асенова
Научен проект
Иглика Асенова, Отлагане и анализ на тънки слоеве, получени чрез плазмено-имерсионна йонна имплантация и молекулно-лъчева епитаксия, Ръководител, , Номер на договора:D04-142/28.03.2014 индекс MУ 14-36/2014 2014
Статия в научно списание
1 M. Milanova, V. Donchev, K. L. Kostov, D. Alonso-Álvarez, E. Valcheva, K. Kirilov, I. Asenova, I. G. Ivanov, S. Georgiev, N. Ekins-Daukes, Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys, Semiconductor Science and Technology, том:32, брой:8, 2017, стр.:85005-0, ISSN (print):0268-1242, ISSN (online):1361-6641, doi:https://doi.org/10.1088/1361-6641/aa7404, Ref, Web of Science, SCOPUS Quartile: Q1 (2017), в сътрудничество с чуждестранни учени, MSc 2017
2 Darina Manova, Lina Franco Arias, Axel Hofele, Ivo Alani, Ariel Kleiman, Iglika Asenova, Ulrich Decker, Adriana Marquez, Stephan Mändl, Nitrogen Incorporation during PVD Deposition of TiO2:N Thin Films, Surface and Coatings Technology, том:312, 2017, стр.:61-65, Ref, Web of Science, в сътрудничество с чуждестранни учени 2017
3 V. Donchev, I. Asenova, M. Milanova, D. Alonso- Álvarez, K. Kirilov, N. Shtinkov, I. G. Ivanov, S. Georgiev, E. Valcheva, N. Ekins-Daukes, Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy , Journal of Physics: Conf. Series, 2017, ISSN (print):1742-6588, ISSN (online):1742-6596, doi:https://doi.org/10.1088/1742-6596/794/1/012013, Ref, SCOPUS Quartile: Q3 (2017), International, PhD 2017
4 V. Donchev, I. Asenova, M. Milanova, D. Alonso- Álvarez, K. Kirilov, N. Shtinkov, I. G. Ivanov, S. Georgiev, E. Valcheva, N. Ekins-Daukes, Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy , Journal of Physics: Conf . Series, том:794 , брой:1, 2017, ISSN (online):17426588, doi:10.1088/1742-6596/794/1/012013, Ref, в сътрудничество с чуждестранни учени, MSc 2017
5 I Asenova, D Manova, S Mändl, Incorporation of nitrogen into TiO2 thin films during PVD processes, Journal of Physics: Conference Series, том:559, 2014, doi:10.1088/1742-6596/559/1/012008, Ref, в сътрудничество с чуждестранни учени 2014
6 I. Asenova, E. Valcheva, K. Kirilov, A Poturlyan, Influence of the structural inhomogeneity on the luminescent properties of nitride multiple quantum wells grown by MOCVD, Journal of Physics: Conference Series, том:514, 2014, стр.:12054-12057, Web of Science, SCOPUS Quartile: Q3 (2014), PhD 2014
7 Iglika Asenova, Evgenia Valcheva, Dimo Arnaudov, Tunnelling and current density in short period strained AlN/GaN superlattices, Physica E, том:63, 2014, стр.:139-146, Ref, Web of Science, PhD 2014
8 E. Valcheva, I. Asenova, K. Kirilov, Negative Differential Resistance in Short Period Strained AlN/GaN Superlattices, Bulgarian Journal of Physics, 2013, Ref, PhD 2013
Статия в сборник (на конференция и др.)
1 Stankova, M., K. Dionissieva, A. Andreeva, E. Goranova, E. Boyadzhieva-Deleva, V. Vassileva, I. Asenova, Factors influencing decision-making in therapeutic interventions for children with developmental language disorders, poster presentation for Closing conference of COST Action IS 1406 Enhancing children's oral language skills across Europe and beyond - a collaboration focusing on interventions for children with difficulties learning their first language, 2019 2019
2 M. Milanova, V. Donchev, P. Terziyska, E. Valcheva, S. Georgiev, K. Kirilov, I. Asenova, N. Shtinkov, Y. Karmakov, I. G. Ivanov, Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications, AIP Conference Proceedings, 2019, стр.:140004-0, doi:https://doi.org/10.1063/1.5091319, Ref, в сътрудничество с чуждестранни учени, MSc 2019
Участие в конференция
1 Секционен доклад, Иглика Асенова, Incorporation of nitrogen into TiO2 thin films during PVD processes 2014
2 Секционен доклад, Иглика Асенова, Transmission and optical properties of III-nitride multiple quantum wells and superlattices with disturbed periodicity 2014