| Глава от книга |
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1
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V. Donchev, M. Milanova, S. Georgiev, Study of GaAs-Based Dilute Nitride Materials Grown by Liquid Phase Epitaxy (in: Newest Updates in Physical Science Research), B. P. International
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2021
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2
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V. Donchev, K. Germanova, N. Shtinkov, S. J. Vlaev, Electronic structure and optical properties of AlAs/GaAs superlattices containing embedded GaAs quantum wells with abrupt and graded interfaces, Nova Science Publishers, Inc. , New York, Рецензирано, в сътрудничество с чуждестранни учени
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2006
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| Дипломна работа |
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Веселин Тодоров Дончев, Върху интерпретацията на L3 линията на титана в спектроскопията на потенциалите на появяване, СУ "Св. Клименто Охридски", Физически факултет, Ръководител:Кръстьо Нанев, Христо Тенчов
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1985
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| Дисертация доктор на науките |
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Веселин Тодоров Дончев, “Surface photovoltage spectroscopy of semiconductor optoelectronic materials and nanostructures”
"Повърхностна фотоволтаична спектроскопия на полупроводникови оптоелектронни материали и наноструктури"
, Физически факултет, Софийски Университет "Св. Кл. Охридски"
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2022
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| Дисертация д-р |
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Веселин Тодоров Дончев, “Изследване на електрични и оптични свойства на точкови дефекти в галиев арсенид”, Физически факултет, Софийски Университет "Св. Кл. Охридски" , Ръководител:доц. д-р Красимира Германова
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1991
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| Друго (научно-популярни и др. под.) |
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1
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Веселин Тодоров Дончев, Полупроводникови наноструктури
в: "Нанонауки и нанотехнологии" , , гл.5 сс. 41-53 , 53 Пловдивско университетско издателство "П. Хилендарски"
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2017
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2
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V. Donchev, OPTICAL AND VIBRATIONAL PROPERTIES OF ONE DIMENSIONAL NANOSTRUCTURES BASED ON III-V SEMICONDUCTORS,
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2010
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| Научен проект |
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1
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Веселин Дончев, Перовскитни материали и структури за фотоволтаиката (PERMAVOLT), Ръководител, , Номер на договора:КП-06-Рила/10 /16.12.2021г
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2022
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2
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Веселин Дончев, National Research Programme E+: Low Carbon Energy for the Transport and Households, Член, МОН, Номер на договора:D01-214/2018
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2018
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3
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Веселин Дончев, Национален център по мехатроника и чисти технологии, Член, , Номер на договора:BG05M2OP001-1.001-0008
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2018
|
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4
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Веселин Дончев, Изследване на разредени нитриди на А3В5 съединения за следваща генерация слънчеви елементи
, Ръководител, ФНИ на СУ, Номер на договора:114/2016г.
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2016
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5
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Веселин Дончев, Перспективни материали за следваща генерация слънчеви елементи, Ръководител, ФНИ, МОМН, Номер на договора:ДКОСТ 01/16
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2016
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6
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Веселин Дончев, Multiscale in modelling and validation for solar photovoltaics., Член, Европейската програма за сътрудничество в областта на науката и технологиите (COST), Номер на договора:COST action 1406 MultiscaleSolar
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2015
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7
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Веселин Дончев, Перспективни материали на основата на разредени нитриди на А3В5 съединения за следваща генерация слънчеви елементи
, Ръководител, ФНИ на СУ, Номер на договора:71/2015
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2015
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8
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Веселин Дончев, “Изследване оптичните свойства на многослойни структури с квантови точки вложени в квантова яма (InAs/InGaAs/GaAs) за инфрачервени фотодетектори”, Член, ФНИ, СУ, Номер на договора:38/2011
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2011
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9
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Веселин Дончев, “Изследване на оптичните свойства на многослойни структури от InAs/InP квантови жички с повърхностна фотоволтаична спектроскопия», Ръководител, ФНИ на СУ, Номер на договора:149/2010
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2010
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10
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Веселин Дончев, “Характеризиране на квантови жички от InAs/InP с повърхностна фотоволтаична спектроскопия”, Ръководител, ФНИ, СУ, Номер на договора:99/2009
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2009
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11
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Веселин Дончев, “Характеризиране на квантови точки от InP/GaAs с повърхностна фотоволтаична спектроскопия”, Ръководител, ФНИ, СУ, Номер на договора: 40/2008
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2008
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12
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Веселин Дончев, “Характеризиране на многослойни наноструктури и композитни наноматериали с оптични и електрични методи”, Ръководител, НФНИ, МОН , Номер на договора:Д01-463/12.07.06
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2006
|
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13
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Веселин Дончев, „Формиране и изследване на твърдотелни и органични тънки слоеве за сензорни функции”, Член, ФНИ, МОН, Номер на договора:ВУ-Ф-203/06
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2006
|
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14
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Веселин Дончев, “Електрона структура на квантови жички от GaAs/AlGaAs с плавни интерфейси”, Член, ФНИ, МОМ, Номер на договора:.МУ-Ф 01/05/
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2005
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15
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Веселин Дончев, “Повърхностна фотоволтаична спектроскопия на полупроводникови материали и структури”, Член, ФНИ, МОН, Номер на договора:У-Ф-08/04
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2004
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| Научно ръководство |
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1
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Веселин Дончев, Изследване на материали за фотоволтаични приложения, Софийски Унивесритет "Св. Кл. Охридски" дисертация д-р:Стефан Георгиев
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2024
|
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2
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Веселин Дончев, Изследване на дебели слоеве от разредени нитриди на А3В5 съединения чрез повърхностна фотоволтаична спектроскопия, СУ "Св. Кл. Охридски" дипломна работа:Стефан Георгиев
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2018
|
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3
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Веселин Дончев, Разредени нитриди за фотоволтаични приложения, СУ, ФзФ дипломна работа:Стефан Георгиев, Фак.№ 90029
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2015
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4
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Веселин Дончев, ИЗСЛЕДВАНЕ ОПТИЧНИТЕ СВОЙСТВА НА НОВИ III-V ПОЛУПРОВОДНИКОВИ НАНОСТРУКТУРИ С ПОВЪРХНОСТНА ФОТОВОЛТАИЧНА СПЕКТРОСКОПИЯ, Софийски Университет “Св. Климент Охридски”, Физически Факултет дисертация д-р:Цветан Георгиев Иванов
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2009
|
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5
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Веселин Дончев, Компютърно моделиране на диелектричните свойства и инфрачервените спектри на пропускане на Si/SiOx нанокомпозитни материали, дипломна работа:Десислава Валентинова Тодорова Фак. № 160 179
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2009
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6
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Веселин Дончев, Моделиране на диелектричните свойства на нанокомпозитни материали, дипломна работа:Десислава Валентинова Тодорова Фак. № 8798
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2007
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7
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Веселин Дончев, Изследване механизмите на излъчвателна рекомбинация в V-образни квантови жички от GaAs/AlGaAs, дипломна работа:Деница Искренова Димитрова, ф.N. 08165
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2005
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8
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Веселин Дончев, Определяне на дифузионната дължина в кристален Si чрез повърхностна фотоволтаична спектроскопия , дипломна работа:Цветан Георгиев Иванов, Фак. № 160042
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2005
|
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9
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Веселин Дончев, Дифузни квантови ями от GaAs/AlGaAs с еквидистантни електронни състояния, дипломна работа:Мирослав Станев Сарайдаров, Фак. № 7926
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2000
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| Статия в научно списание |
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1
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M. Milanova, S. Georgiev, V. Donchev, Doping of dilute nitride compounds grown by liquid phase epitaxy, J. Phys.: Conf. Series , vol:2436 , 2023, pages:12032-0, Ref, PhD
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2023
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2
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Vesselin Donchev, Malina Milanova, Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells, Coatings , vol:13, issue:12, 2023, pages:2052-0, Ref, Web of Science, IF (3.4 - 2022), Web of Science Quartile: Q2 (2023), SCOPUS, SJR (0.51 - 2022), SCOPUS Quartile: Q2 (2023)
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2023
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3
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Vesselin Donchev, Davide Regaldo, Stefan Georgiev, Aleksandra Bojar, Mattia da Lisca, Kiril Kirilov, José Alvarez, Philip Schulz, Jean-Paul Kleider, Surface Photovoltage Study of Metal Halide Perovskites Deposited Directly on Crystalline Silicon, ACS Omega, vol:8, issue:9, 2023, pages:8125-8133, doi:/10.1021/acsomega.2c07664, Ref, Web of Science, IF (4.1 - 2022), Web of Science Quartile: Q2 (2023), SCOPUS, SJR (0.69 - 2022), SCOPUS Quartile: Q1 (2023), International, PhD
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2023
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4
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M. Milanova, V. Donchev, S. Georgiev, K. Kirilov, P. Terziyska, Effect of growth temperature on nitrogen incorporation into GaAsN during liquid-phase epitaxy, J. Phys.: Conf. Series , vol:2240, 2022, pages:12047-0, Ref, SCOPUS, SJR (0.21 - 2021), SCOPUS Quartile: Q4 (2020), PhD
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2022
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5
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Aleksandra BOJAR, Davide Regaldo, José Alvarez, David Alamarguy, Vesselin Donchev, Stefan Georgiev, Philip Schulz, Jean-Paul Kleider, Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration, EPJ Photovoltaics , vol:13, 2022, pages:18-18, Ref, Web of Science, IF (21 - 2022), Web of Science Quartile: Q3 (2022), SCOPUS, SJR (0.69 - 2022), SCOPUS Quartile: Q2 (2022), International, PhD
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2022
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6
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Vesselin Donchev, Malina Milanova, Stefan Georgiev, Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications, Energies, vol:15 , issue:18, 2022, pages:6563-6563, doi:10.3390/en15186563, Ref, Web of Science, IF (3.2 - 2022), Web of Science Quartile: Q3 (2022), SCOPUS, SJR (0.63 - 202), SCOPUS Quartile: Q1 (2022), PhD
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2022
|
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7
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S. Georgiev, V. Donchev, M. Milanova, Calculation of the Bandgap of Dilute Nitride GaAsSbN Alloys , J. Phys.: Conf. Series , vol:1762, 2021, pages:12042-12042, Ref, SCOPUS, SJR (0.23 - 2019), PhD
|
2021
|
|
8
|
V. Donchev, M. Milanova, Dilute nitrides heterostructures grown by liquid phase epitaxy for solar cells applications, J. Phys.: Conf. Series , vol:1762, 2021, pages:12025-12025, Ref, SCOPUS, SJR (0.23 - 2019)
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2021
|
|
9
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V. Donchev, M. Milanova, K. Kirilov, S. Georgiev, K.L. Kostov, G.M. Piana, G. Avdeev, Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications, Journal of Crystal Growth, vol:574, 2021, pages:126335-0, Ref, Web of Science, IF (1.83 - 2021), Web of Science Quartile: Q2 (JCI CATEGORY PHYSICS, APPLIED), SCOPUS, SJR (0.43 - 2021), SCOPUS Quartile: Q2 (2021), International, PhD
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2021
|
|
10
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V. Donchev, M. Milanova, S. Georgiev, K. L. Kostov, K. Kirilov, Dilute nitride InGaAsN and GaAsSbN layers grown by liquid-phase epitaxy for photovoltaic applications, J. Phys.: Conf. Series , vol:1492, 2020, pages:12049-0, doi:10.1088/1742-6596/1492/1/012049, Ref, SCOPUS, SJR (0.21 - 2020), SCOPUS Quartile: Q4 (2020), PhD
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2020
|
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11
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M. Milanova, V. Donchev, B. Arnaudov, D. Alonso-Álvarez, P. Terziyska, GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy, J. Mat. Sci.:Materials in Electronics , vol:31, 2020, pages:2073-2080, Ref, Web of Science, IF (2.5 - 2020), Web of Science Quartile: Q2 (2020), SCOPUS, SJR (0.489 - 2019), SCOPUS Quartile: Q2 (2020), International
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2020
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12
|
M. Milanova, V. Donchev, K. J. Cheetham, Zh. Cao, I. Sandall, G. M. Piana, O. S. Hutter, K. Durose, A. Mumtaz, Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy, Solar energy , vol:208, 2020, pages:659-664, doi:https://doi.org/10.1016/j.solener.2020.08.029, Ref, Web of Science, IF (5.742 - 2020), Web of Science Quartile: Q2 (2019), SCOPUS, SJR (1.337 - 2020), SCOPUS Quartile: Q1 (2020), International
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2020
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13
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M. Milanova, V. Donchev, K. L. Kostov, D. Alonso-Álvarez, P. Terziyska, G. Avdeev, E. Valcheva, K. Kirilov, S. Georgiev, Study of GaAsSb:N bulk layers grown by liquid phase epitaxy for solar cells applications, Mat. Res.Express , vol:6, issue:7, 2019, ISSN (online):20531591, doi:10.1088/2053-1591/ab179f, Ref, Web of Science, IF (1.929 - 2019), Web of Science Quartile: Q3 (MATERIALS SCIENCE, MULTIDISCIPLINARY), SCOPUS, SJR (0.365 - 2019), SCOPUS Quartile: Q2 (Surfaces, Coatings and Films), International, PhD
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2019
|
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14
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V. Donchev, Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications, Mater. Res. Express , vol:6, 2019, pages:103001-0, Ref, Web of Science, IF (1.929 - 2019), Web of Science Quartile: Q3 (2019), SCOPUS, SJR (0.37 - 2019), SCOPUS Quartile: Q2 (2019), International
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2019
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15
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V. Donchev, S. Georgiev, A. Aho, M. Guina, Surface photovoltage study of GalnNAs layers for photovoltaic
applications, J. Phys.: Conf. Series, vol:1186, issue:1, 2019, pages:12003-12003, SCOPUS, SJR (0.23 - 2019), International, MSc
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2019
|
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16
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Tsanimir Angelov, Vesselin Donchev, Stefan Georgiev, Kiril Kirilov, Carrier Lifetime and Phase Retardation of the Photoresponse of Photovoltaic Materials, Journal of Physics and Technology, том:2, брой:1, 2018, стр.:3-7, Ref, MSc
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2018
|
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17
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Tsanimir Angelov, Vesselin Donchev, Stefan Georgiev, K. Kirilov, Carrier Lifetime and Phase Retardation of the Photoresponse of Photovoltaic Materials, Journal of Physics and Technology, vol:2, issue:1, 2018, pages:3-7, PhD, MSc
|
2018
|
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18
|
V. Donchev, M.Milanova, I.Asenova, N.Shtinkov, D.Alonso-Alvarez, A.Melor, Y.Karmakov, S.Georgiev, N. Ekins-Daukes, Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy, Journal of Crystal Growth, vol:483, 2018, pages:140-146, Ref, Web of Science, IF (1.6 - 2018), Web of Science Quartile: Q2 (2018), SCOPUS, SJR (0.515 - 2018), SCOPUS Quartile: Q2 (2018), International, PhD
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2018
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19
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V. Donchev, S. Georgiev, I. Leontis, A. G. Nassiopoulou, Effective Removal of Surface Recombination Centers in Silicon
Nanowires Fabricated by Metal-Assisted Chemical Etching, ACS Appl. Energy Mater., том:1, 2018, стр.:3693-3701, Ref, IF (4.473 - 2019), Web of Science Quartile: Q2 (2019), SCOPUS, SJR (1.5 - 2019), SCOPUS Quartile: Q1 (2019), в сътрудничество с чуждестранни учени, MSc
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2018
|
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20
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Abu Hamed, Tareq, Adamovic, Nadja, Aeberhard, Urs, Alonso-Alvarez, Diego, Amin-Akhlaghi, Zoe, Maur, Matthias Auf Der, Beattie, Neil, Bednar, Nikola, Berland, Kristian, Birner, Stefan, Multiscale in modelling and validation for solar photovoltaics, EPJ PHOTOVOLTAICS, vol:9, 2018, ISSN (print):2105-0716, doi:10.1051/epjpv/2018008
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2018
|
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21
|
M. Milanova, V. Donchev, K. L. Kostov, D. Alonso-Álvarez, E. Valcheva, K. Kirilov, I. Asenova, I. G. Ivanov, S. Georgiev, N. Ekins-Daukes, Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys, Semiconductor Science and Technology, том:32, брой:8, 2017, стр.:85005-0, ISSN (print):0268-1242, ISSN (online):1361-6641, doi:https://doi.org/10.1088/1361-6641/aa7404, Ref, Web of Science, SCOPUS Quartile: Q1 (2017), в сътрудничество с чуждестранни учени, MSc
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2017
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22
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V. Donchev, I. Asenova, M. Milanova, D. Alonso- Álvarez, K. Kirilov, N. Shtinkov, I. G. Ivanov, S. Georgiev, E. Valcheva, N. Ekins-Daukes, Optical properties of thick GaInAs(Sb)N layers grown by
liquid-phase epitaxy , Journal of Physics: Conf. Series, 2017, ISSN (print):1742-6588, ISSN (online):1742-6596, doi:https://doi.org/10.1088/1742-6596/794/1/012013, Ref, SCOPUS Quartile: Q3 (2017), International, PhD
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2017
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23
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V. Donchev, I. Asenova, M. Milanova, D. Alonso- Álvarez, K. Kirilov, N. Shtinkov, I. G. Ivanov, S. Georgiev, E. Valcheva, N. Ekins-Daukes, Optical properties of thick GaInAs(Sb)N layers grown by
liquid-phase epitaxy , Journal of Physics: Conf . Series, том:794 , брой:1, 2017, ISSN (online):17426588, doi:10.1088/1742-6596/794/1/012013, Ref, в сътрудничество с чуждестранни учени, MSc
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2017
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24
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V. Donchev, M.Milanova, J. Lemieuxx, N. Shtinkov, I.G.Ivanov, Surface photovoltage and photoluminescence study of thick Ga(In)AsN layers grown by liquid-phase epitaxy, J. Phys.: Conf. Ser. , том:700, брой:1, 2016, стр.:12028-0, Ref, Web of Science, в сътрудничество с чуждестранни учени, MSc
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2016
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25
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V. Donchev, Ts. Ivanov, Ts. Ivanova, S. Mathews, J. O. Kim, S. Krishna, Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors, Superlattices and Microstructures , том:88, 2015, стр.:711-722, Ref, Web of Science, в сътрудничество с чуждестранни учени, PhD
|
2015
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26
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V. Donchev, D. Nesheva, D. Todorova, K. Germanova, E. Valcheva, Characterization of Si–SiOx nanocomposite layers by comparative analysis of computer simulated and experimental infra-red transmission spectra, Thin Solid Films , том:520, брой:6, 2012, стр.:2085-2091, Ref, Web of Science, PhD
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2012
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27
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Ts. Ivanov, V. Donchev, K. Germanova, Ts. Tellaleva, K. Borissov, V. Hongpinyo, P. Vines, J. P. R. David, B. S. Ooi, Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors, J.Physics:Conf. Ser, vol:356, 2012, pages:12032-0, Ref, International, MSc
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2012
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28
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T. Angelova, N. Shtinkov, Ts. Ivanov, V. Donchev, A. Cantarero, Ch. Deneke, O. G. Schmidt, A. Cros, Optical and acoustic phonon modes in strained InGaAs/GaAs rolled up tubes, Appl. Phys. Lett., том:100, 2012, стр.:201904-0, Ref, Web of Science, в сътрудничество с чуждестранни учени
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2012
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29
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Ts. Ivanov, V. Donchev, K. Germanova, P. F. Gomes, F. Iikawa, M. J. S. P. Brasil, M. A. Cotta, Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy, J. Appl. Phys. , том:110, 2011, стр.:64302-64302, Ref, Web of Science, в сътрудничество с чуждестранни учени
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2011
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30
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F. Iikawa, V. Donchev, Ts. Ivanov, G. O. Dias, L. H. G. Tizei, R. Lang, E. Heredia, P. F. Gomes, M. J. S. P. Brasil, et al., Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts, Nanotechnology, том:22, 2011, стр.:65703-0, Ref, Web of Science, в сътрудничество с чуждестранни учени
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2011
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31
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Ts. Ivanov, V. Donchev, T. Angelova, A. Cros, A. Cantarero, N. Shtinkov, K. Borissov, D. Fuster, Y. González, L. González, Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies, J. Phys. : Conf. Ser, том:253, 2010, стр.:12043-0, Ref, Web of Science, в сътрудничество с чуждестранни учени, PhD, MSc
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2010
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32
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V. Donchev, Ts Ivanov, T. Angelova, A. Cros, A Cantarero, N Shtinkov, K Borissov, D Fuster, Y. González, L González, Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires
, J. Phys. : Conf. Ser., том:210, 2010, стр.:12041-0, Ref, в сътрудничество с чуждестранни учени, PhD
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2010
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33
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V. Donchev, Ts. Ivanov, K. Germanova, K. Kirilov, Surface photovoltage spectroscopy – an advanced method for characterization of semiconductor nanostructures, Trends in Applied spectroscopy, том:8, 2010, стр.:27-66, Ref
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2010
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34
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T. Ivanov, V. Donchev, K. Germanova, K. Kirilov, A vector model for analysing the surface photovoltage amplitude and phase spectra applied to complicated nanostructures, Journal of Physics D: Applied Physics, том:42, брой:13, 2009, doi:10.1088/0022-3727/42/13/135302, Ref, SCOPUS Quartile: Q1 (2009), PhD
|
2009
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35
|
D. Todorova, E. Valcheva, V. Donchev, D. Manova, S. Maendel, Optical properties of AlN/SiO2 nanocomposite layers, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, том:11, брой:9, 2009, стр.:1296-1298, Ref, Web of Science, в сътрудничество с чуждестранни учени, MSc
|
2009
|
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36
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A. M. Miteva, S.J. Vlaev, V. Donchev, Stark effect in p-type delta doped quantum wells, Progress In Electromagnetics Research Letters, том:2, 2008, стр.:45-52, Ref
|
2008
|
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37
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V. Donchev, K. Kirilov, T. Ivanov, K. Germanova, A surface photovoltage spectroscopy study of GaAs/AlAs complicated nanostructures with graded interfaces , Journal of Applied Physics, том:101, брой:12, 2007, doi:10.1063/1.2740357, Ref, Web of Science, SCOPUS Quartile: Q1 (2007), PhD
|
2007
|
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38
|
K. Kirilov, V. Donchev, M. Saraydarov, K. Germanova, Electron states energies and wave
functions of V-shaped quantum wires with graded interfaces, Journal of Optoelectronics and Advanced Materials, том:9, брой:1, 2007, стр.:197-200, Ref, SCOPUS Quartile: Q2 (2007)
|
2007
|
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39
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S. Dimitrov, E. Valcheva, V. Donchev, Electronic states properties in GaN/AlxGa1-xN heterostructures with graded interfaces, J. Optoel. & Adv. Mat., том:9, брой:1, 2007, стр.:194-196, Ref, Web of Science, PhD
|
2007
|
|
40
|
Ts. Ivanov, V. Donchev, Y. Wang, H. S. Djie, B. S. Ooi, Interdiffused InAs/InGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy, J. Appl. Phys., том:101, брой:11, 2007, стр.:114309-0, Ref, Web of Science, в сътрудничество с чуждестранни учени, PhD
|
2007
|
|
41
|
A. M. Miteva, S. J. Vlaev, V. T. Donchev, L. M. Gaggero-Sag, Quantum confined Stark effect in n-type delta-doped quantum wells, Revista Mexicana de Fisica,, том:7, 2007, стр.:74-77, Ref, Web of Science, в сътрудничество с чуждестранни учени, PhD
|
2007
|
|
42
|
Ts. Ivanov, V. Donchev, K. Kirilov, K. Germanova, Surface photovoltage investigation of GaAs quantum wells , Journal of Optoelectronics and Advanced Materials, том:9, брой:1, 2007, стр.:190-193, Ref, Web of Science, SCOPUS Quartile: Q2 (2007)
|
2007
|
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43
|
T. S. Ivanov, V. Donchev, K. Kirilov, K. Germanova, Surface photovoltage investigation of GaAs quantum wells, Journal of Optoelectronics and Advanced Materials, том:9, брой:1, 2007, стр.:190-193, Ref, Web of Science, SCOPUS Quartile: Q2 (2007), PhD
|
2007
|
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44
|
V. Donchev, Ts. Ivanov, Y. Wang, H. S. Djie, B. S. Ooi, Surface photovoltage spectroscopy of interdiffused InAs/InGaAlAs quantum dashes-in-well structure, phys. stat. sol. (c) , том:4, брой:2, 2007, стр.:412-414, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2007
|
|
45
|
K. Kirilov, Ts. Ivanov, V. Donchev, K. Germanova, An Alternative Approach for Determining the Semiconductor Type Based on SPV Phase Spectral Measurements, Bulgarian Journal of Physics, том:33, брой:3, 2006, стр.:223-228
|
2006
|
|
46
|
V. Donchev, E. S. Moskalenko, K. F. Karlsson, P. O. Holtz, B. Monemar, W. V. Schoenfeld, J. M. Garcia, P. M. Petroff, Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes, Physics of the Solid State, vol:48, issue:10, 2006, pages:1993-1999, Ref, Web of Science Quartile: Q4 (2006), International
|
2006
|
|
47
|
V. Donchev, K. Kirilov, Ts. Ivanov, K. Germanova, Surface photovoltage phase spectroscopy - a handy tool for characterisation of bulk semiconductors and nanostructures, Materials Science & Engineering B: Solid-State Materials for Advanced Technology, том:129, брой:1-3, 2006, стр.:186-192, doi:10.1016/j.mseb.2006.01.010, Ref, Web of Science, SCOPUS Quartile: Q1 (2006), PhD
|
2006
|
|
48
|
Ts. Ivanov, K. Kirilov, V. Donchev, K. Germanova, Surface Photovoltage Spectroscopy of GaAs Quantum Wells Embedded in AlAs/GaAs Superlattices, Bulgarian Journal of Physics, том:33, брой:3, 2006, стр.:217-222
|
2006
|
|
49
|
K. Kirilov, V. Donchev, T. Ivanov, K. Germanova, P. Vitanov, P. Ivanov, A surface photovoltage spectroscopy system used for minority carrier diffusion length measurements on floating zone silicon, Journal of Optoelectronics and Advanced Materials, том:7, брой:1, 2005, стр.:533-536, Ref, Web of Science, SCOPUS Quartile: Q2 (2005), PhD, MSc
|
2005
|
|
50
|
Moskalenko, ES, Karlsson, KF, Donchev, V, Holtz, PO, Schoenfeld, WV, V. Donchev, Effect of an electric field on the carrier collection efficiency of InAs quantum dots, PHYSICS OF THE SOLID STATE, vol:47, issue:11, 2005, pages:2154-2161, ISSN (print):1063-7834, ISSN (online):1090-6460
|
2005
|
|
51
|
E. S. Moskalenko, K. F. Karlsson, V. Donchev, P. O. Holtz, B. Monemar, W. V. Schoenfeld, P. M. Petroff, Effect of the Electric Field on the Carrier Collection Efficiency of InAs/GaAs quantum dots, Physics of the Solid State, vol:47, issue:11, 2005, pages:2154-2161, Ref, SCOPUS Quartile: Q3 (2005), International
|
2005
|
|
52
|
Moskalenko E.S., Karlsson F.K., V. T. Donchev, Holt P.O., Monemar B.,, Schoenfeld W.V., Petroff P.M, Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots , Nano Letter, том:5, брой:11, 2005, стр.:2117-2122, Ref, Web of Science, в сътрудничество с чуждестранни учени, PhD
|
2005
|
|
53
|
M. Saraydarov, V. Donchev, K. Germanova, K. Kirilov, Electronic states of diffused
GaAs/AlGaAs quantum wires, Journal of Optoelectronics and Advanced Materials, брой:7, 2005, стр.:525-528, Ref, SCOPUS Quartile: Q2 (2005)
|
2005
|
|
54
|
K. Kirilov, K. Germanova, V. Donchev, Tzv. Ivanov, Numerical simulation of timeresolved
Surface photovoltage at SI-SiO2 interfaces, Journal of Optoelectronics and Advanced Materials, брой:7, 2005, стр.:529-532, Ref, SCOPUS Quartile: Q2 (2005)
|
2005
|
|
55
|
M. Saraydarov, V. Donchev, K. Germanova, X. L. Wang, S. J. Kim, M. Ogura, Characterization of GaAs/AlGaAs quantum wires by means of longitudinal photoconductivity, J. Appl. |Phys., vol:95, issue:1, 2004, pages:64-68, Ref, Web of Science, IF ( - 2004), Web of Science Quartile: Q1 (2004), International, PhD
|
2004
|
|
56
|
V. Donchev, J. C. Bourgoin, P. Bois, Dark current in electron irradiated GaAs/AlGaAs multiple quantum wells, Nucl. Instrum. Methods in Phys. Res. A, том:517, брой:1-3, 2004, стр.:94-100, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2004
|
|
57
|
E. S. Moskalenko, K. F. Karlsson, V. Donchev, P. O. Holtz, B. Monemar, W. V. Schoenfeld, P.M.Petroff, Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination, Appl. Phys. Lett., том:85, брой:5, 2004, стр.:754-756, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2004
|
|
58
|
V. Donchev, K. F. Karlsson, E. Moskalenko, P. O. Holtz, B. Monemar, W. V. Schoenfeld, J. M. Garcia, P. M. Petrov, Temperature study of the photoluminescence of a single InAs/GaAs quantum, phys. stat. sol. (c), том:1, брой:3, 2004, стр.:608-611, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2004
|
|
59
|
E. S. Moskalenko, K. F. Karlsson, V. Donchev, P. O. Holtz, B. Monemar, W. V. Schoenfeld, P.M.Petroff, The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots, Appl. Phys. Lett., том:84, брой:24, 2004, стр.:4896-4898, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2004
|
|
60
|
M. Saraydarov, V. Donchev, K. Kirilov, K. Germanova, An alternative approach to electronic
structure calculation of crescent-shaped GaAs/AlGaAs quantum wires, Journal of Materials Science: Materials in Electronics, брой:14, 2003, стр.:795-796, doi:10.1023/A:1026109405672, Ref, SCOPUS Quartile: Q2 (2003)
|
2003
|
|
61
|
Moskalenko, S.., V. Donchev, Karlsson, F., Holtz, O., Monemar, B., Schoenfeld, V., Garcia, M., Petroff, M., Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot, Phys. Rev. B, том:68, брой:15, 2003, стр.:155317-155317, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2003
|
|
62
|
V. Donchev, K. Germanova, M.Saraydarov, K.Dachev, Kinetics study on the mechanism of zero-bias photocurrent in semi-insulating bulk GaAs, Mat. Sci. & Engineering B, том:98, брой:3, 2003, стр.:239-243, Ref, Web of Science, PhD, MSc
|
2003
|
|
63
|
V. Donchev, M. Sarayadarov, K. Germanova, M. Ivanov, Longitudinal photoconductivity of GaAs/AlGaAs quantum wires, Journal of Materials Science: Materials in Electronics , том:14, 2003, стр.:793-794, Ref, PhD, MSc
|
2003
|
|
64
|
H. Samic, G. C. Sun, V. Donchev, N. X. Nghia, M. Gandouzi, M. Zazoui, J. C. Bourgoin, H. El-Abbassi, S. Rath, P. J. Sellin, Characterization of Thick Epitaxial GaAs Layers for X-ray Detection, Nucl. Instrum. Methods in Phys. Res. A, том:487, 2002, стр.:107-112, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2002
|
|
65
|
V. Donchev, J. C. Bourgoin, P. Bois, Dark current through GaAs/AlGaAs multiple quantum wells, Semiconductor Science and Technology, том:17, брой:6, 2002, стр.:621-624, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2002
|
|
66
|
V. Donchev, M. Saraydarov, N. Shtinkov, K. Germananova, S. J. Vlaev, Diffused GaAs / AlGaAs quantum wells with equidistant electronic states, Materials Science and Engineering C, том:19, брой:1-2, 2002, стр.:135-138, Ref, Web of Science, в сътрудничество с чуждестранни учени, MSc
|
2002
|
|
67
|
M. Mazilu, A. Miller, V. T. Donchev, Modular Method for Calculation of Transmission and Reflection in Multilayered Structures, Applied Optics , том:40, 2001, стр.:6670-6676, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
2001
|
|
68
|
V. Donchev, N. Shtinkov, K. Germanova, I. Ivanov, H. Brachkov, Tzv. Ivanov, Photoluminescence Line-Shape Analysis in Quantum Wells Embedded in Superlattices, Mat. Sci. Engin. C, том:15, брой:1-2, 2001, стр.:75-77, Ref, Web of Science, MSc
|
2001
|
|
69
|
N. Shtinkov, S.J. Vlaev, V. Donchev, “Gama-X Coupling in Diffused AlAs/GaAs Superlattices, phys. stat. sol. (b), том:221, брой:2, 2000, стр.:9-10, Ref, Web of Science, PhD
|
2000
|
|
70
|
N. Shtinkov, V. Donchev, K. Germanova, S. Vlaev, I. Ivanov, Effect of non-abrupt interfaces in AlAs/GaAs Superlattices with Embedded GaAs Quantum Wells, Vacuum, том:58, 2000, стр.:561-567, Ref, Web of Science, PhD
|
2000
|
|
71
|
N. Shtinkov, S.J. Vlaev, V. Donchev, K. Germanova, Electronic States of a Superlattice with an Enlarged Quantum Well: A Tight-Binding Approach, Physica Status Solidi (b), том:220, брой:1, 2000, стр.:153-157, Ref, Web of Science, PhD
|
2000
|
|
72
|
N. Shtinkov, V. Donchev, K. Germanova, H. kolev, Electronic Structure of Quantum Wells Embedded in Short-Period Superlattices with Graded Interfaces, Semicond. Sci. Technol. , том:15, 2000, стр.:946-949, Ref, Web of Science, PhD, MSc
|
2000
|
|
73
|
Shtinkov, N, Vlaev, SJ, V. Donchev, Gamma-X coupling in diffused AlAs/GaAs superlattices, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol:221, issue:2, 2000, ISSN (print):0370-1972
|
2000
|
|
74
|
V. Donchev, Tzv. Ivanov, I.Ivanov, M.Angelov, K.Germanova, High Temperature Excitons in GaAs Quantum Wells Embedded in AlAs/GaAs Superlattices, Vacuum , том:58, 2000, стр.:478-484, Ref, Web of Science, в сътрудничество с чуждестранни учени, MSc
|
2000
|
|
75
|
V. Donchev, K. Germanova, N. Shtinkov, I. Ivanov, S. Vlaev, Photoluminescence Study of AlAs/GaAs Superlattices Containing Enlarged Wells, Thin Solid Films, том:364, 2000, стр.:224-227, Ref, Web of Science, PhD
|
2000
|
|
76
|
M. Mazilu, V. Donchev, A. Miller, O. Blum, Optical determination of interface roughness in multilayered semiconductor structures, Appl.Phys.B, том:68, 1999, стр.:633-636, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
1999
|
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77
|
V. Donchev, N. Shtinkov, K. Germanova, Effect of random defect density fluctuations on the Fermi level in highly compensated
semiconductors
, Mat. Sci. & Engineering B, том:47, 131 (1997), 1997, стр.:131-136, Ref, Web of Science, MSc
|
1997
|
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78
|
V. Donchev, K. Germanova, Time evolution of Zero-Bias photocurrent in semiinsulating GaAs:Cr, J.Material Science Letters , том:15, брой:23, 1996, стр.:2075-0, Ref, Web of Science
|
1996
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79
|
K. Germanova, V. Donchev, I. Ivanov, N. Zheleva, Ch. Hardalov, Spectral Behaviour of Zero-bias Potocurrent at Low-Temperature in Bulk Semi-Insulating GaAs, .Electrochem.Soc., том:141, брой:9, 1994, стр.:2533-2536, Ref, Web of Science
|
1994
|
|
80
|
S.L.Feng, J.Krynicki, V. Donchev, J.C.Bourgoin, M.Di Forte- Poisson, C.Brylinski, S.Delage, H.Blank, S.Alaya, Band offset of GaAs-GaInP heterojunctions, Semicond. Sci. Technol. , том:8, 1993, стр.:2092-2096, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
1993
|
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81
|
M. Zazoui, V. Donchev, J. C. Bourgoin, Electron emission from defects in multiband semiconductors
, Phys.Rev. B. , том:47, брой:8, 1993, стр.:4296-1300, в сътрудничество с чуждестранни учени
|
1993
|
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82
|
Chaabane H., Zazoui M., Bourgoin J.C, V. Donchev, Electronic transport through semiconductor barriers, Semiconductor Science and Technology, том:12, 1993, стр.:2077-2084, Ref, Web of Science, в сътрудничество с чуждестранни учени
|
1993
|
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83
|
K. Germanova, V. Donchev, V. Valchev, Ch. Hardalov, I. Yanchev, On the Maximum in Hall Coefficient Temperature Dependence in Medium-Doped n-GaAs, Appl. Phys. A, том:50, брой:4, 1990, стр.:369-372, doi:10.1007/BF00323593, Ref, Web of Science
|
1990
|
|
84
|
K. Germanova, V. Donchev, V. Valchev, Ch. Hardalov, Characterization of Medium-Doped n-Type GaAs by Hall Measurements, phys.stat.sol.(a) , том:113, брой:2, 1989, стр.:231-233, doi:10.1002/pssa.2211130269, Ref, Web of Science
|
1989
|
|
85
|
NANEV, KN, V. Donchev, ON THE SHAPE OF THE TIL3-LINE, DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, vol:42, issue:4, 1989, pages:43-46, ISSN (print):0861-1459
|
1989
|
|
86
|
K. Germanova, V. Donchev, Ch. Hardalov, L. Nikolov, EL2 in photoconductivity spectra of Cr-doped SI GaAs bulk crystals, Journal of Physics D: Applied Physics , том:11, 1987, стр.:1507-1511, Ref, Web of Science
|
1987
|
|
87
|
V. Donchev, K. Nanev, Chr. Tenchov, On the interpretation of the titanium line in the appearance potential spectroscopy, Vacuum, vol:36, 1986, pages:655-657, Ref, IF ( - 1986), Web of Science Quartile: Q3 (1986)
|
1986
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| Статия в сборник (на конференция и др.) |
|
1
|
A. Mumtaz, M. Milanova, I. Sandall, K. Cheetham, Z. Cao, M. Bilton, G. Piana, N. Fleck,L. Phillips, O. Hutter, V. Donchev, K. Durose, GaAsSbN for Multi-Junction Solar Cells, Porc. 47th IEEE Photovoltaic Specialists Conference , 2020, pages:1799-1803, Ref, International
|
2020
|
|
2
|
M. Milanova, V. Donchev, P. Terziyska, E. Valcheva, S. Georgiev, K. Kirilov, I. Asenova, N. Shtinkov, Y. Karmakov, I. G. Ivanov, Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications, AIP Conference Proceedings, 2019, pages:140004-0, doi:https://doi.org/10.1063/1.5091319, Ref, SCOPUS, SJR (0.19 - 2019), International, PhD
|
2019
|
|
3
|
N. S. Beattie, P. See, G. Zoppi, P. M. Ushasr, M. Duchamp, I. Farrer, V. Donchev, D. A. Ritchie, S. Tomic, Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) , 2018, стр.:2747-2751, doi:2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) , в сътрудничество с чуждестранни учени
|
2018
|
|
4
|
K. Kirilov, E. Valcheva, V. Donchev, K. Lozanova, Investigation of InGaN/GaN nanostructures for Leds, Proceedings VII BALKAN CONFERENCE ON LIGHTING, BalkanLight 2018, издателство:Издателска къща "Св. Иван Рилски", 2018, стр.:13-16, PhD
|
2018
|
|
5
|
В. Дончев, Полупроводникови Наноструктури, Нанонауки и нанотехнологии, редактор/и:Йорданка Димова, издателство:Пловдивско университетско издателство "П. Хилендарски", 2017, стр.:41-53
|
2017
|
|
6
|
T. Angelova, A. Cros, Ts. Ivanov, V. Donchev, A. Cantarero, N. Shtinkov, Ch. Deneke, O. G. Schmidt, Raman Scattering and Surface Photovoltage Spectroscopy Studies of InGaAs/GaAs Radial Superlattices, AIP Conf. Proc., vol. 1399, 2011, стр.:419-420, Ref, в сътрудничество с чуждестранни учени
|
2011
|
|
7
|
Donchev, V., Ivanov, Ts., Angelova, T., Cros, A., Cantarero, A., Shtinkov, N., Fuster, D., Gonzalez, Y., V. Donchev, SURFACE PHOTOVOLTAGE AND PHOTOLUMINECSENCE SPECTROSCOPY OF SELF-ASSEMBLED InAs/InP QUANTUM WIRES, 11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), vol:210, 2010, ISSN (print):1742-6588, ISBN:*****************
|
2010
|
|
8
|
D. Todorova, V. Donchev, D. Nesheva, E. Valcheva, Computer simulation of infra-red
transmission spectra of SiO2 films containing amorphous Si nanoparticles
, Nanoscience and Nanotechnology, 9, редактор/и:E. Balabanova and I. Dragieva, 2009, стр.:17-20, MSc
|
2009
|
|
9
|
E. Krusteva, R. Kotsilkova, E. Valcheva, V. Donchev, E. Ivanov, T. Dobreva, Effect of processing and external magnetic field on the structure of epoxy/multiwall carbon nanotube composites,, Nanoscience & Nanotechnology 9, редактор/и:E.Balabanova, I. Dragieva, 2009, стр.:156-159
|
2009
|
|
10
|
V. Donchev, K. F. Karlsson, K. Kirilov, Ts. Ianov, K. Germanova, M. Saraydarov, Electronic states of V-shaped quantum wires with graded interfaces, Nanoscience & Nanotechnology, 2008, стр.:28-32
|
2008
|
|
11
|
K. Kirilov, V. Donchev, M. Saraydarov, K. Germanova, Electron States In V-Shaped
Quantum Wires As a Function Of The Interface Grading, Nanoscience & Nanotechnology, 2007, стр.:27-0
|
2007
|
|
12
|
V. Donchev, K. Kirilov, M. Saraydarov, K. Germanova, Computer simulation study of the
electronic structure of V-shaped quantum wires with graded interfaces, Nanoscience & Nanotechnology, 2005, стр.:11-14
|
2005
|
|
13
|
Moskalenko, ES, Karlsson, KF, Donchev, V, Holtz, PO, Monemar, B, Schoenfeld, WV, V. Donchev, Exploitation of an additional infrared laser to modulate the luminescence intensity from InAs quantum dots, PHYSICS OF SEMICONDUCTORS, PTS A AND B, vol:772, 2005, pages:705-706, ISSN (print):0094-243X, ISBN:0-7354-0257-4
|
2005
|
|
14
|
Kirilov, K, Germanova, K, Donchev, V, Ivanov, T, Numerical simulation of the time-resolved surface photovoltage at Si-SiO2 interfaces, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol:7, issue:1, 2005, pages:529-532, ISSN (print):1454-4164
|
2005
|
|
15
|
Donchev, V, Karlsson, KF, Moska, ES, Holtz, PO, Monemar, B, Schoenfeld, WV, Garcia, JM, V. Donchev, Temperature study of the photoluminescence of a single InAs/GaAs quantum dot, 8TH CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS-8), 2004, pages:608-611, ISBN:3-527-40505-4, doi:10.1002/pssc.200304050
|
2004
|
|
16
|
Saraydarov, M, Donchev, V, Kirilov, K, Germanova, K, Shtinkov, N, An alternative approach to the electronic-structure calculation of crescent-shaped GaAs/AlGaAs quantum wires, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol:14, issue:10-12, 2003, pages:795-796, ISSN (print):0957-4522, ISSN (online):1573-482X
|
2003
|
|
17
|
Donchev, V, Saraydarov, M, Germanova, K, Wang, XL, Kim, SJ, V. Donchev, Photoconductivity of GaAs/AlGaAs quantum wires measured along the wires direction, COMPOUND SEMICONDUCTORS 2002, vol:174, 2003, pages:191-194, ISSN (print):0951-3248, ISBN:0-7503-0942-3
|
2003
|
|
18
|
Germanova, K, Donchev, V, Hardalov, C, V. Donchev, Extrinsic surface photovoltage spectroscopy - An alternative approach to deep level characterisation in semiconductors, PHOTOVOLTAIC AND PHOTOACTIVE MATERIALS - PROPERTIES, TECHNOLOGY AND APPLICATIONS, vol:80, 2002, pages:317-320, ISSN (print):1568-2609, ISBN:1-4020-0824-4
|
2002
|
|
19
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Sun, GC, Samic, H, Donchev, V, Gautrot, S, V. Donchev, GaAs photodetector for x-ray imaging, PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, vol:692, 2002, pages:181-186, ISSN (print):0272-9172, ISBN:1-55899-628-1
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2002
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20
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Vlaev, S, Miteva, A, V. Donchev, Electronic states in graded composition quantum wells under a constant electric field, ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES, vol:42, 1997, pages:55-58, ISBN:0-7923-4875-3
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1997
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21
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Donchev, V, Ivanov, T, V. Donchev, Electronic structure of AlAs/GaAs superlattices with an embedded centered GaAs quantum well, ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES, vol:42, 1997, pages:51-54, ISBN:0-7923-4875-3
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1997
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22
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GERMANOVA, K, DONCHEV, V, IVANOV, I, ZHELEVA, N, V. Donchev, SPECTRAL BEHAVIOR OF ZERO-BIAS PHOTOCURRENT AT LOW-TEMPERATURE IN BULK SEMIINSULATING GAASCR, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol:141, issue:9, 1994, pages:2533-2536, ISSN (print):0013-4651
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1994
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23
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GERMANOVA, K, DONCHEV, V, IVANOV, I, V. Donchev, EL2 INTRACENTER TRANSITION IN PHOTOCONDUCTIVITY SPECTRA OF SEMIINSULATING GAAS-CR, OPTICAL CHARACTERIZATION OF SEMICONDUCTORS, 1992, pages:63-70, ISBN:0-87849-632-7
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1992
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| Студия в сборник (на конференция и др.) |
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Kitaev, YE, Panfilov, AG, Tronc, P, V. Donchev, Electron state symmetries and optical selection rules in the (GaAs)(m)(AlAs)(n) superlattices grown along the [001], [110], and [111] directions, ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES, vol:42, 1997, pages:1-50, ISBN:0-7923-4875-3
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1997
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| Участие в конференция |
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1
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Присъствие, Веселин Дончев, Investigation of GaSb micro-islands deposited on Si substrates
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2024
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|
2
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Присъствие, Веселин Дончев, Study of GaSb micro-islands deposited on Si substrates
|
2024
|
|
3
|
Постер, Davide Regaldo, Frequency Dependence of Modulated Surface Photovoltage (SPV)
to Characterize Surface Defects
|
2023
|
|
4
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Постер, Веселин Дончев, Doping of dilute nitride compounds grown by liquid phase epitaxy
|
2022
|
|
5
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Постер, Веселин Дончев, Effect of growth temperature on nitrogen incorporation into GaAsN during liquid-phase epitaxy
|
2021
|
|
6
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Пленарен доклад, Веселин Дончев, Dilute nitrides heterostructures grown by liquid phase epitaxy for solar cells applications
|
2020
|
|
7
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Секционен доклад, Веселин Дончев, GaAsSbN/GaAs layers and heterostructures grown by liquid-phase epitaxy for solar cells applications
|
2019
|
|
8
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Постер, Веселин Дончев, Dilute nitride InGaAsN and GaAsSbN layers grown by liquid-phase epitaxy for photovoltaic applications
|
2019
|
|
9
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Секционен доклад, Stanko Tomic, Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering
|
2018
|
|
10
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Секционен доклад, Малина Миланова, Low-temperature liquid-phase epitaxy growth and characterization of GaAsSbN/GaAs heterostructures for solar cell applications
|
2018
|
|
11
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Секционен доклад, Веселин Дончев, Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications
|
2018
|
|
12
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Секционен доклад, Веселин Дончев, Surface photovoltage study of GaInAsN layers for photovoltaic applications
|
2018
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|
13
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Секционен доклад, Веселин Дончев, Surface Photovoltage Spectroscopy Studies of Optoelectronic Materials and Nanostructures
|
2018
|
|
14
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Постер, Стефан Георгиев, Веселин Дончев, Surface photovoltage spectroscopy characterization of GaAsSbN layers grown by liquid-phase epitaxy
|
2017
|
|
15
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Постер, Цанимир Ангелов, Carrier Lifetime and Phase Retardation of the Photoresponse of Photovoltaic Materials
|
2017
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|
16
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Секционен доклад, Евгения Вълчева, Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy
|
2016
|
|
17
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Секционен доклад, Веселин Дончев, Surface Photovoltage Spectroscopy – a Handy Tool For Characterization of Semiconductor Materials and Nanostructures
|
2015
|
|
18
|
Постер, Иглика Асенова, Surface photovoltage and photoluminescence study of thick Ga(In)AsN layers grown by liquid-phase epitaxy
|
2015
|
|
19
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Постер, Цветан Иванов, Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors
|
2011
|
| Учебник |
|
|
Д. Мърваков, В. Дончев, И. Халтъков, В. Димитров, В. Голев, В. Иванов, И. Мирчева, Физика и астрономия за 10 клас, задължителна подготовка, 2001, Труд-Прозорец-Просвета, София, Рецензирано
|
2001
|
| Учебно помагало |
|
1
|
В. Дончев, М. Михов, М. Абрашев, А. Андреева, М. Балева, Ж. Бънзаров, ”Лабораторен практикум по електричество и магнетизъм” , Heron Press, София
|
2009
|
|
2
|
А. Андреева, М. Балева, М. Младенова, , Ж. Бънзаров, В. Дончев, Д. Тонова, Л. Иванова, .”Лабораторен практикум по оптика”, Софийско университетско издателство, София
|
2005
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